Domain patterning thin crystalline ferroelectric film with focused ion beam for nonlinear photonic integrated circuits

2006 ◽  
Vol 100 (10) ◽  
pp. 106103 ◽  
Author(s):  
Xijun Li ◽  
Kazuya Terabe ◽  
Hideki Hatano ◽  
Huarong Zeng ◽  
Kenji Kitamura
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Ferroelectric Film

Turning Sample Into (Re)Solution—Focused Ion Beam Shaped Solid Immersion Lenses

2015 ◽  
Author(s):  
Philipp Scholz ◽  
Michael Sadowski ◽  
Christian Boit ◽  
Sebastian Kupijai ◽  
Marvin Henniges ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Signal Transmission ◽  
Optical Signal ◽  
Analysis Process ◽  
First Case ◽  
Solution Focused

Abstract This work is a unique solution for enhancing optical failure analysis and optical signal transmission. Optical failure analysis remains to be a vital part of the analysis process, despite shrinking feature sizes and challenging package technologies. The presented optical signal transmission supports the development of photonic integrated circuits. The key component is a Focused Ion Beam (FIB) process which shapes optical lenses out of the sample material leading to an improvement in lateral resolution and signal transmission. Two cases are shown that demonstrate these improvements. The first case is an optical backside analysis in a spatially confined opening of a package where other Solid Immersion Lens (SIL) systems could not be applied. It offers an improvement in spatial resolution by a factor of 2, down to a FWHM of 387 nm. The second case is a novel application for FIB shaped lenses aiming at photonic integrated circuits. This lens is created out of the isolating frontside and improves the grating coupler efficiency by a factor of 4.1.

Echelle grating – curved wave-guide demultiplexer for photonic integrated circuits

1992 ◽  
Vol 70 (10-11) ◽  
pp. 928-930
Author(s):  
M. Fallahi ◽  
K. A. McGreer ◽  
A. Delage ◽  
R. Normandin ◽  
I. M. Templeton ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Waveguide Structure ◽  
Active Components ◽  
Channel Spacing ◽  
Ion Beam Lithography ◽  
Echelle Grating ◽  
Wave Guides

A grating spectrometer integrated with curved output wave guides was designed and fabricated in GaAs–AlGaAs waveguide structure for use in the 1 μm wavelength range. By incorporating curved wave guides, a larger separation between output facets was obtained. This is desirable for future integration. High-quality patterns were fabricated by focused ion beam lithography and reactive ion etching. Eight outputs with a channel spacing of 2 nm were obtained. The potential of the structure for integration with active components is discussed.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

Focused Ion Beam Metrology

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Wagner ◽  
P. Blauner ◽  
P. Longo ◽  
S. Cohen
Keyword(s):  
Integrated Circuits ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dimensional Change ◽  
Critical Dimension ◽  
Ion Beams ◽  
Near Surface ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes

AbstractFocused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.

GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching

1990 ◽  
Vol 57 (24) ◽  
pp. 2537-2539 ◽  
Author(s):  
W. J. Grande ◽  
John E. Johnson ◽  
C. L. Tang
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Ion Beam ◽  
Ion Beam Etching

Direct Imaging of Device Characteristics In a Focused ion Beam System

1998 ◽  
Vol 4 (S2) ◽  
pp. 652-653 ◽  
Author(s):  
A. N. Campbell ◽  
J. M. Soden
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Yield Enhancement ◽  
The Past ◽  
Design Changes ◽  
Design Debugging

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator

1996 ◽  
Author(s):  
L.R. Herlinger ◽  
S. Chevacharoenkul ◽  
D.C. Erwin
Keyword(s):  
Electron Microscope ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Sem Analysis ◽  
Imaging Analysis ◽  
Mechanical Grinding ◽  
Transmission Electron ◽  
Multiple Samples

Abstract Cross-sectioning is a necessary technique for the failure analysis of integrated circuits. Historically, the majority of samples have been prepared for scanning electron microscope (SEM) analysis. Today's smaller geometry devices, however, increasingly require the improved spatial resolution afforded by the transmission electron microscope (TEM), both in imaging analysis and in elemental analysis. Specific-area cross-section TEM (SAXTEM) analysis allows the failure analyst to identify defects that may go undiscovered in the SEM. A procedure is described for a timely preparation of SAXTEM samples using a focused ion beam (FIB) instrument and a manipulator probe. This procedure extends the state-of-the-art in several key respects: A) no mechanical grinding is necessary, B) samples as large as the FIB chamber can be accommodated, e.g., whole wafers, C) multiple samples can be prepared from one die, D) the procedure is faster and more repeatable than previously reported procedures.

Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit

2014 ◽  
Author(s):  
Michael DiBattista ◽  
Corey Senowitz ◽  
Hasan Faraby ◽  
Prabhakar Bandaru
Keyword(s):  
Integrated Circuits ◽  
Energy Dispersive Spectroscopy ◽  
High Speed ◽  
Focused Ion Beam ◽  
Chemical Elements ◽  
Ion Beam ◽  
Metal Resistance ◽  
Energy Dispersive ◽  
Deposited Metal ◽  
Organometallic Precursors

Abstract A key capability of focused ion beam (FIB) tools is the ability to deposit conductive materials by introducing organometallic precursors such as tungsten hexacarbonyl [W(CO)6] or (methylcyclopentadienl) trimethyl platinum [C9H17Pt]. The FIB deposited metal is often used in applications such as the modification of integrated circuits (ICs) by creating new electrical connection on the device. The electrical properties of the FIB material are of particular concern to high speed digital and radio frequency (RF) circuit designers because the resistivity of the FIB deposited metal is orders of magnitude higher in value than the near bulk resistivity value of the metals used in IC manufacturing. In this paper, we developed a correlation between the chemical composition of the FIB deposited metal and the electrical resistivity using an effective media theory (EMT) model. Analysis shows that gallium from the ion beam is the dominant contributor to lowering the resistivity of the jumper. The results of this work and model allow us to understand the role the chemical elements play in the electrical resistance of the FIB electrical jumper and to estimate the FIB metal resistance from energy dispersive spectroscopy (EDS) analysis and the geometry.

A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution

2002 ◽  
Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Process Development ◽  
Imaging System ◽  
Ion Beam ◽  
Layer By Layer ◽  
X Ray ◽  
Submicron Structures

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.

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