Fabrication of Nano- and Micro-Scale UV Imprint Stamp Using Diamond-Like Carbon Coating Technology

2006 ◽  
Vol 6 (11) ◽  
pp. 3619-3623
Author(s):  
Eung-Sug Lee ◽  
Jun-Ho Jeong ◽  
Ki-Don Kim ◽  
Young-Suk Sim ◽  
Dae-Geun Choi ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Adhesive Layer ◽  
Diamond Like Carbon ◽  
Coating Process ◽  
Ion Beam Lithography ◽  
Two Photon ◽  
Dlc Coating ◽  
Two Photon Polymerization

Two-dimensional (2-D) and three-dimensional (3-D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography were fabricated with two methods: namely, a DLC coating process, followed by focused ion beam lithography; and two-photon polymerization patterning, followed by nanoscale-thick DLC coating. We used focused ion beam lithography to fabricate 70 nm deep lines with a width of 100 nm, as well as 70 nm deep lines with a width of 150 nm, on 100 nm thick DLC layers coated on quartz substrates. We also used two-photon polymerization patterning and a DLC coating process to successfully fabricate 200 nm wide lines, as well as 3-D rings with a diameter of 1.35 μm and a height of 1.97 μm, and a 3-D cone with a bottom diameter of 2.88 μm and a height of 1.97 μm. The wafers were successfully printed on an UV-NIL using the DLC stamps without an anti-adhesive layer. The correlation between the dimensions of the stamp's features and the corresponding imprinted features was excellent.

Pattern Transfer of 1μm Sized Microgap and Microbridge Electrode for Application in Biomedical Nano-Diagnostics

2014 ◽  
Vol 925 ◽  
pp. 533-537 ◽  
Author(s):  
Balakrishnan Sharma Rao ◽  
Uda Hashim
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Conventional Technique ◽  
Good Choice ◽  
Clinical Diagnostics ◽  
Pattern Transfer ◽  
Ion Beam Lithography ◽  
Microelectronic Fabrication ◽  
Photolithography Process

We present a new design of biochip for application in clinical diagnostics by using a conventional method of pattern transfer process in microelectronic fabrication. Although there are many advanced techniques available to produce nanostructures such as electron beam lithography (EBL), ion-beam lithography (IBL), focused ion beam milling and nanoimprint lithography, these methods often requires high maintenance costs, time consuming and very complicated compared to conventional photolithography. This conventional technique is still a good choice for a feature size more than 1 micron. In this work, microbridge and microgap design from chrome mask are transferred on silicon wafer to fabricate a biochip. The pattern transfer of the first mask of electrode is presented in this paper to test the repeatability of pattern transfer during photolithography process. Therefore, during the process, the resolution and precise alignment factors are taken into account to prevent circuit and device failure. Post-exposure bake time and development limitations are recorded for both designs.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1123-1126 ◽  
Author(s):  
J.D. Jambreck ◽  
H. Schmitt ◽  
B. Amon ◽  
M. Rommel ◽  
A.J. Bauer ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam

Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

2006 ◽  
Vol 515 (2) ◽  
pp. 636-639 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
K. Šlapikas ◽  
S. Tamulevičius ◽  
A. Guobienë ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Ion Beam Synthesis

Diamond-Like Carbon Coating—It'S Application for Polymeric Substrates

1991 ◽  
Vol 239 ◽  
Author(s):  
Fred M. Kimock ◽  
Alex J. Hsieh ◽  
Peter G. Dehmer ◽  
Pearl W. Yip
Keyword(s):  
High Speed ◽  
Protective Coatings ◽  
Ion Beam ◽  
Chemical Exposure ◽  
Optical Systems ◽  
Impact Behavior ◽  
Organic Liquids ◽  
Diamond Like Carbon ◽  
Dlc Coating ◽  
The Impact

ABSTRACTWe report on a recently commercialized Diamond-Like Carbon (DLC) coating that has been deposited on polycarbonate at near room temperature, via a unique ion beam system. Aspects of high speed impact behavior, chemical resistance, abrasion resistance, and thermal stability of the coating are examined. Results of scanning electron microscopy studies indicate that adhesion of the DLC coating is very good; no delamination of the coating was found on ballistically tested specimens. The well-bonded DLC coating did not cause the impact performance of polycarbonate to become brittle. Chemical exposure test results show that the DLC coating is capable of protecting polycarbonate from chemical attack by aggressive organic liquids. These ion beam deposited DLC coatings have considerable potential as protective coatings for optical systems.

Microstructures of GaAs fabricated by finely focused ion beam lithography

1989 ◽  
Vol 9 (1-4) ◽  
pp. 277-279 ◽  
Author(s):  
Takao Shiokawa ◽  
Pil Hyon Kim ◽  
Manabu Hamagaki ◽  
Tamio Hara ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

2007 ◽  
Vol 18 (46) ◽  
pp. 465302 ◽  
Author(s):  
Ali Ozhan Altun ◽  
Jun-Ho Jeong ◽  
Jong-Joo Rha ◽  
Ki-Don Kim ◽  
Eung-Sug Lee
Keyword(s):  
Boron Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ultra Violet ◽  
Ion Beam Lithography

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Sign in / Sign up

Export Citation Format

Share Document