Reduced interface state densities for remote microwave plasma silicon nitride

1992 ◽  
Vol 70 (10-11) ◽  
pp. 795-798 ◽  
Author(s):  
D. Landheer ◽  
J. A. Bardwell ◽  
I. Sproule ◽  
J. Scott-Thomas ◽  
W. Kwok ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Field Effect Transistors ◽  
Chemical Vapour ◽  
Depth Profiling ◽  
Interface State ◽  
State Density ◽  
Fixed Charge ◽  
Silicon Substrates ◽  
Plasma Chemical Vapour Deposition ◽  
State Densities

The interface state density and fixed charge density of films of a-Si3N4:H deposited on silicon substrates by remote microwave plasma chemical vapour deposition have been studied as a function of deposition and annealing temperature. Interface state densities (Dit as low as 9 × 1010 cm−2 eV−1 have been obtained for films deposited at 215 °C and annealed for 15 min at 500 °C. The films exhibited positive fixed charge levels (QN/q)> 1013 cm−2, increasing slightly with deposition temperature and decreasing slightly with annealing at temperatures from 500 to 700 °C. Fourier transform infrared spectroscopy and Auger depth profiling were used to study the impurities in the films and at the interface. Metal–insulator–silicon field effect transistors made with these films showed room temperature effective channel hole mobilities of 37 cm2 V−1 s−1.

Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma

1994 ◽  
Vol 347 ◽  
Author(s):  
P. C. Chen ◽  
J. Y. Lin ◽  
H. L. Hwang
Keyword(s):  
Microwave Plasma ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Breakdown Field ◽  
Silicon Oxides ◽  
Oxide Breakdown ◽  
Thin Silicon ◽  
State Densities ◽  
Plasma Annealing

ABSTRACTFundamental characteristics such as the oxide breakdown fields, oxide charges and interface state density of various ultra-thin silicon oxides (≤ 8 nm) grown by microwave plasma afterglow oxidation at low temperatures (400 °C and 600 °C) were investigated. The effective Oxide charge density of 600 °C as-grown oxide was as low as 6×1010 cm-2. The breakdown fields of the oxides were further enhanced and the interface state densities were reduced by employing fluorination (HF soaked) and low temperature N2O plasma annealing. The breakdown field of the thin oxide grown at 600 °C with 15 min N2O plasma annealing was 12 MV/cm. The reduction of interface state density was about 35% for 600 °C fluorinated oxide. When integrated with poly-gate process, the interface state density was as low as 5×1010 cm-2eV-1.

Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates

1993 ◽  
Vol 334 ◽  
Author(s):  
M.Y. Mao ◽  
S.S. Tan ◽  
X.K. Zhang ◽  
W.Y. Wang
Keyword(s):  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapour Deposition ◽  
Surface Particle

AbstractPolycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.

POST‐METALLIZATION ANNEALING OF ULTRA‐THIN REMOTE PLASMA ENHANCED CVD OXIDES

1996 ◽  
Vol 446 ◽  
Author(s):  
L‐Å Ragnarsson ◽  
P. Lundgren ◽  
D. Landheer
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Interface State ◽  
State Density ◽  
Silicon Substrates ◽  
Constant Voltage ◽  
Remote Plasma ◽  
Current Voltage ◽  
Voltage Stress ◽  
Capacitance Voltage

AbstractA remote plasma enhanced chemical vapour deposition (RPECVD) process was used to deposit thin silicon dioxides on silicon substrates. The oxide properties were compared with thermal oxides with similar thicknesses (2.5–9 nm) using capacitance‐voltage (C‐V), current‐voltage (I‐V) and constant voltage stress measurements (I‐t). Post‐metallization annealing (PMA) showed different annealing dynamics as compared to the thermal oxides for anneal times below approximately 1000 s (at 260 °C) after which the dynamics were similar. The deposited oxides had a higher initial interface state density (Dit) than the thermal oxides, but after PMA they were found to be of the same quality as the thermal oxides. Positive charging of the deposited oxides during constant voltage stress was the same as for thermal oxides, showing that the stress endurance of the two are similar.

Determining the sp2/sp3 bonding concentrations of carbon films using X-ray absorption spectroscopy

2008 ◽  
Vol 86 (12) ◽  
pp. 1401-1407 ◽  
Author(s):  
T Hamilton ◽  
R G Wilks ◽  
M V Yablonskikh ◽  
Q Yang ◽  
M N Foursa ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapour ◽  
Carbon Films ◽  
Silicon Substrates ◽  
X Ray ◽  
Nitrogen Concentrations ◽  
Plasma Chemical Vapour Deposition ◽  
X Ray Absorption

The sp2 bonding concentrations of nitrogen-doped amorphous carbon samples and nanodiamond films were determined from their soft X-ray absorption spectra. The amorphous carbon (a-C) samples were deposited under atmospheres of varying nitrogen concentrations onto polytetrafluoroethylene (PTFE) polymer and silicon substrates. The nanodiamond films were synthesized on silicon substrates in a CH4/H2 gas mixture by microwave plasma chemical vapour deposition. The sp2 bonding concentrations in the a-C films (deposited on PTFE substrates) increase from 74% to 93% as nitrogen doping increases, with a step-like increase in sp2 fraction when nitrogen concentrations in the films exceed 27%. The a-C films on silicon substrates display the same trend of increasing sp2 concentration as a function of greater nitrogen concentration. Nanodiamond deposition conditions, such as bias voltage and methane concentration, affect the purity of the film. Our analysis reveals sp2 bonding concentrations in these samples ranging from a few percent to 11%.PACS Nos.: 78.70.Dm, 61.10.Ht, 61.46.+w, 81.05.Uw

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

scholarly journals Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

2019 ◽  
Vol 29 (49) ◽  
pp. 1904465 ◽  
Author(s):  
Nan Fang ◽  
Satoshi Toyoda ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Kosuke Nagashio
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Energy Spectra ◽  
Full Energy ◽  
State Densities ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document