Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates

1993 ◽  
Vol 334 ◽  
Author(s):  
M.Y. Mao ◽  
S.S. Tan ◽  
X.K. Zhang ◽  
W.Y. Wang
Keyword(s):  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Polycrystalline Diamond ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapour Deposition ◽  
Surface Particle

AbstractPolycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.

Diamond film growth by pulse-modulated magnetoactive microwave plasma chemical vapour deposition

1996 ◽  
Vol 281-282 ◽  
pp. 264-266 ◽  
Author(s):  
Akimitsu Hatta ◽  
Hidetoshi Suzuki ◽  
Ken-ichi Kadota ◽  
Toshimichi Ito ◽  
Akio Hiraki
Keyword(s):  
Chemical Vapour Deposition ◽  
Diamond Film ◽  
Vapour Deposition ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition ◽  
Diamond Film Growth

Investigation of Diamond Particles Grown by Microwave Plasma CVD on Tungsten Wire Tips.

1990 ◽  
Vol 202 ◽  
Author(s):  
Sue-Anne Stuart ◽  
Steven Prawer ◽  
Alon Hoffman ◽  
Alec Moodie ◽  
Paul Weiser
Keyword(s):  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Plasma Cvd ◽  
Plasma Chemical ◽  
Diamond Particles ◽  
Microwave Plasma Cvd ◽  
Large Growth ◽  
Plasma Chemical Vapour Deposition ◽  
Large Diamond

ABSTRACTLarge diamond particles up to 30μm in diameter have been deposited on W wire tips using Microwave Plasma Chemical Vapour Deposition. Raman, SEM and TEM investigations were all carried out on a single particle. Large growth steps were observed on (100) facets but were absent on the (111) facets. Raman measurements indicated greater crystalline quality for (100) than (111) facets. TEM revealed the (111) facets to be covered with small islands of diamond about 10Å high. The dominant defect was found to be stacking faulting on the {111} planes which gives rise to some hexagonal spacings in the electron diffraction pattern. The results suggest that growth in the <111> and <100> directions are driven by different mechanisms.

Properties of CVD Diamond/Metal Interface

1989 ◽  
Vol 162 ◽  
Author(s):  
Yusuke Mori ◽  
Hiroshi Kawarada ◽  
Akio Hiraki
Keyword(s):  
Room Temperature ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Point Contact ◽  
Cvd Diamond ◽  
Rectification Ratio ◽  
Metal Interface ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition

ABSTRACTElectric properties of the interface between metal and semiconducting CVD diamond formed by microwave plasma chemical vapour deposition (CVD) have been investigated. Much better rectifying property due to Schottky barrier has been obtained in the films formed with CO(5%)/H2 compared with CH4(0.5%)/H2. A high breakdown voltage (200 V) and a high rectification ratio (105) have been observed at the evaporated Al/diamond interfaces formed with CO(5%)/H2. In the point contact interfaces, where the metal-carbon reaction is not expected at room temperature, the rectifying and ohmic property depends on the electronegativity of metals.

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