Studies of Ion-Assisted Growth and Properties of PbTe Epilayers Deposited by Rf Magnetron Sputtering
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ABSTRACT(111) PbTe // (111) BaF2 epilayers have been prepared by rf magnetron sputtering. A small negative substrate bias voltage (-10 V) enhances the (111) growth habit at reduced substrate temperatures (180 °C) and increased deposition rates (2.5 μ/h–1). Langmuir probe diagnostics is used to determine the energy and flux density of Ar ions incident on the growing film. Hall effect measurements are made to determine the carrier type and mobility as a function of the growth temperature.
2006 ◽
Vol 36
(3b)
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pp. 994-996
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2011 ◽
Vol 189-193
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pp. 668-671
2011 ◽
Vol 44
(42)
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pp. 425305
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2012 ◽
Vol 259
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pp. 448-453
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2006 ◽
Vol 201
(3-4)
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pp. 1899-1901
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2019 ◽
Vol 28
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pp. 096369351987573
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