Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

In situ Monitoring of the Effects of Gas Mixtures on Ion Beam Depositions of Diamond-Like Carbon Films

1997 ◽  
Vol 502 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter ◽  
R. Monreal ◽  
P. B. Kosel ◽  
K. Miyoshi
Keyword(s):  
Oxygen Concentration ◽  
Mass Spectrometer ◽  
High Vacuum ◽  
Gas Mixtures ◽  
Carbon Films ◽  
Ion Source ◽  
Ultra High Vacuum ◽  
In Situ Monitoring ◽  
Diamond Like Carbon ◽  
Measuring Device

ABSTRACTA quadrupole mass spectrometer and a total ion-current measuring device have been utilized to monitor the ion compositions of gas mixtures of CH4/H2 and CH4/H2/O2 during the deposition for quality control and process optimization. An ultra high vacuum system using a 20 cm diameter RF excited (13.56 MIfz) ion gun and a four-axis substrate scanner has been developed for deposition of diamond-like carbon films for electrical, optical, and tribological applications. At a constant RF power of 179W, the mass spectra of gas mixture CH4/H2 (1:2.5) showed the most abundant ion is CH3+. Addition of O2 to the ion source has been found to affect the adhesion, deposition rate, and physical and chemical properties of the DLC films. By use of a mass spectrometer with and without the electron beam, the degree of ionization of CH4 was calculated to be about 10%. As the concentration of O2 was increased, all hydrocarbon ions decreased and H3O+ increased, resulting in a decrease in the film growth rate and an increase in etching of Si and glass substrates. In general, the optical bandgap, adsorption coefficients and refractive index decreased as oxygen concentration increased. Raman spectra showed the G-peak position shifted toward the graphitic peak with narrow peak width as oxygen concentration increased. At ultra high vacuum, the coefficient of friction increased with increased adhesion on substrates as oxygen was increased.

A Novel Rectilinear Negative Carbon Ion Beam Source for Large-Area Amorphous Diamond Like Carbon Coatings

1995 ◽  
Vol 396 ◽  
Author(s):  
M.H. Sohn ◽  
YO. Ahn ◽  
Y.W. Ko ◽  
Y. Park ◽  
S.I. Kim
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ion Beams ◽  
Ion Source ◽  
Hydrogen Gas ◽  
Diamond Like Carbon ◽  
Large Area ◽  
Beam Source ◽  
Carbon Ion ◽  
Carbon Ion Beam

AbstractA novel rectilinear negative carbon ion beam source for large-area coatings has been developed, based on SKION's Solid State Ion Beam Technology. The negative carbon ion beam is effectively produced by a primary cesium ion bombardment and the secondary negative carbon ion yield has been observed to be about 0.5. The ion source produces a negative carbon ion current density of 0.25 mA/cm2 at the extraction voltage of 4 kV. The ion beam energy can be independently controlled from 0 eV to 300 eV. Due to the rectilinear geometry for the production of ion beams, the scale-up of the ion beam in length direction can be easily obtained with no limit. Furthermore, the ion source uses no gas discharge to generate ion beams and does not use any hydrogen gas. The ion source can be operated in a high vacuum (<10-7 Torr), and the cesium vapors are filtered and recirculated. The ion source produces ultra-hard (50 GPa), atomically smooth (< 1 nm Ra), and hydrogen-free amorphous diamond-like-carbon (DLC) films over large areas.

Uniform And Large Area Deposition Of Diamond-Like Carbon Using Rf Source Ion Beam

1994 ◽  
Vol 354 ◽  
Author(s):  
Richard L.C. Wu ◽  
William Lanter ◽  
K. Miyoshi ◽  
S.L. Heidger ◽  
P. Bletzinger ◽  
...  
Keyword(s):  
Ion Beam ◽  
Computer Control ◽  
Ionic Species ◽  
Curved Surfaces ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy ◽  
Gaseous Composition ◽  
Beam Currents ◽  
Area Deposition

AbstractWe have designed and constructed a large area ion beam apparatus to deposit DLC films onto 1000 cm2 surfaces with various geometries. The use of an efficient RF excited ion gun (13.56 MHz, 1 kW power, 50-3000 eV ion energy) with a diameter of 20 cm, enables us to generate various hydrocarbon ions with high ion beam currents, varying ionic species and less maintenance. The use of a four axis (Χ-ϒ-Θϒ-ΘZ) substrate scanner with computer control can produce uniform DLC films on large areas and curved surfaces. The effects of RF power, ion energy, gaseous composition, and total pressure on the properties of DLC have been systematically investigated.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Characterization and Performance of Carbon Films Deposited by Plasma and Ion Beam Based Techniques

1994 ◽  
Vol 354 ◽  
Author(s):  
K.C. Walter ◽  
H. Kung ◽  
T. Levine ◽  
J.T. Tesmer ◽  
P. Kodali ◽  
...  
Keyword(s):  
Wear Rate ◽  
Surface Area ◽  
Ion Beam ◽  
Carbon Films ◽  
The Self ◽  
Line Of Sight ◽  
Rf Power ◽  
Hard Carbon ◽  
Self Bias ◽  
Cathodic Arc

AbstractPlasma and ion beam based techniques have been used to deposit carbon-based films. The ion beam based method, a cathodic arc process, used a magnetically mass analyzed beam and is inherently a line-of-sight process. Two hydrocarbon plasma-based, non-line-of-sight techniques were also used and have the advantage of being capable of coating complicated geometries. The self-bias technique can produce hard carbon films, but is dependent on rf power and the surface area of the target. The pulsed-bias technique can also produce hard carbon films but has the additional advantage of being independent of rf power and target surface area. Tribological results indicated the coefficient of friction is nearly the same for carbon films from each deposition process, but the wear rate of the cathodic arc film was five times less than for the self-bias or pulsed-bias films. Although the cathodic arc film was the hardest, contained the highest fraction of sp3 bonds and exhibited the lowest wear rate, the cathodic arc film also produced the highest wear on the 440C stainless steel counterface during tribological testing. Thus, for tribological applications requiring low wear rates for both counterfaces, coating one surface with a very hard, wear resistant film may detrimentally affect the tribological behavior of the counterface.

Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

2006 ◽  
Vol 515 (2) ◽  
pp. 636-639 ◽  
Author(s):  
Š. Meškinis ◽  
V. Kopustinskas ◽  
K. Šlapikas ◽  
S. Tamulevičius ◽  
A. Guobienë ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Ion Beam Synthesis
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