Diffusion and annealing effects of crystalline CuInSe2

1985 ◽  
Vol 63 (6) ◽  
pp. 811-814 ◽  
Author(s):  
A. Vahid Shahidi ◽  
I. Shih ◽  
C. H. Champness
Keyword(s):  
Freezing Method ◽  
Annealing Effects ◽  
P Type ◽  
Directional Freezing ◽  
First Time ◽  
Annealing Experiments ◽  
Type Conduction

Diffusion and annealing experiments have been made on p-type monocrystalline CuInSe2 samples grown by the directional freezing method. It was found that tellurium diffusion into CuInSe2 produced p-type conduction whereas bismuth diffusion resulted in n-type conduction. Photoconductivity experiments were also made for the first time at 77 K on p-type monocrystalline CuInSe2 samples.

Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Electrical Properties ◽  
Size Effect ◽  
High Quality ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Size ◽  
Junction Type ◽  
P Type ◽  
First Time ◽  
Type Conduction

ABSTRACTThe method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

Chemical Beam Epitaxy (CBE) and Laser-Enhanced CBE of GaAs Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 340 ◽  
Author(s):  
H. K. Dong ◽  
N. Y. Li ◽  
C. W. Tu ◽  
M. Geva ◽  
W. C. Mitchel
Keyword(s):  
Substrate Temperature ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Growth Enhancement ◽  
Chemical Beam Epitaxy ◽  
Unintentional Doping ◽  
P Type ◽  
First Time ◽  
Substrate Temperatures ◽  
Type Conduction

ABSTRACTIn this paper, we report chemical beam epitaxy (CBE) of GaAs, and for the first time, Arion laser-assisted CBE using triethylgallium (TEGa) and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. Samples grown at substrate temperatures above 490° C show n-type conduction, while those grown at lower temperatures show p-type conduction. An unintentional doping concentration of n∼lx1016 cm-3 with an electron mobility of 5200 cm2/V.s at 300 K and 16000 cm2/V.s at 77 K have been achieved. These are the best results reported for GaAs grown with TDMAAs. Laser-assisted CBE of GaAs is studied in the substrate temperature range of 240-550°C. There are two different substrate-temperature regions for laser-enhanced growth, 265 to 340°C and 340 to 440°C, which are believed to be caused by different TEGa decomposition mechanisms. The laser-assisted growth with TDMAAs, compared to AS4 or AsH3, shows a wider range of growth enhancement at low substrate temperatures.

Thermoelectric Properties of Undoped CoSb3

2004 ◽  
Vol 449-452 ◽  
pp. 917-920 ◽  
Author(s):  
Il Ho Kim ◽  
G.S. Choi ◽  
M.G. Han ◽  
Ji Soon Kim ◽  
Jung Il Lee ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Phase Transitions ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Arc Melting ◽  
Annealing Effects ◽  
P Type ◽  
Type Conduction ◽  
Semiconducting Behavior

CoSb3 compounds were prepared by the arc melting and their thermoelectric properties were investigated at 300K-600K. Annealing effects were examined and they were correlated to phase transformation and homogenization. Undoped CoSb3 showed p-type conduction and intrinsic semiconducting behavior at all temperatures examined. Thermoelectric properties were changed with constituent phases because α-CoSb2, β-CoSb and Sb are metallic or semimetallic phases while δ-CoSb3 is semiconducting phase. Thermoelectric properties were remarkably improved by annealing in vacuum and they were closely related to phase transitions. Single phase δ-CoSb3 was successfully obtained by annealing at 400°C for 24hrs.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices

2015 ◽  
Vol 3 (34) ◽  
pp. 8804-8809 ◽  
Author(s):  
Afzaal Qamar ◽  
Hoang-Phuong Phan ◽  
Jisheng Han ◽  
Philip Tanner ◽  
Toan Dinh ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Orientation ◽  
Offset Voltage ◽  
Device Geometry ◽  
Stress Dependent ◽  
P Type ◽  
The Impact ◽  
First Time

This communication reports for the first time, the impact of device geometry on the stress-dependent offset voltage of single crystal p-type 3C–SiC four terminal devices.

Directional freezing of spermatozoa and embryos

2014 ◽  
Vol 26 (1) ◽  
pp. 83 ◽  
Author(s):  
Amir Arav ◽  
Joseph Saragusty
Keyword(s):  
Cooling Rate ◽  
Drop Size ◽  
Mechanical Damage ◽  
Rapid Freezing ◽  
Wild Animals ◽  
Microscope Slide ◽  
Freezing Method ◽  
Wide Range ◽  
Sexed Semen ◽  
Directional Freezing

Directional freezing is based on a simple thermodynamic principle whereby the sample is moved through a predetermined temperature gradient at a velocity that determines the cooling rate. Directional freezing permits a precise and uniform cooling rate in small- and large-volume samples. It avoids supercooling and reduces mechanical damage caused by crystallisation. Directional solidification was used to date for slow and rapid freezing, as well as for vitrification of oocytes and embryos by means of the minimum drop size technique: small drops are placed on a microscope slide that is moved at high velocity from the hot base to the cold base. Sperm samples from a wide range of domestic and wild animals were successfully cryopreserved using the directional freezing method. The bovine sexed semen industry may benefit from the increased survival of spermatozoa after directional freezing.

Quantum-Confined Optical Interband Transitions in 5-Doped Doping Superlattices

1989 ◽  
Vol 145 ◽  
Author(s):  
E. F. Schubert ◽  
T. D. Harris ◽  
J. E. Cunningham
Keyword(s):  
Emission Spectra ◽  
Doping Profile ◽  
Luminescence Spectra ◽  
Interband Transitions ◽  
Doping Technique ◽  
Quantum Confined ◽  
P Type ◽  
First Time ◽  
Experimental Absorption ◽  
Good Agreement

AbstractOptical absorption and photoluminescence experiments are performed on GaAs doping superlattices, which have a δ-function-like doping profile of alternating n-type and p-type dopant sheets. Absorption and emission spectra reveal for the first time the clear signature of quantum-confined interband transitions. The peaks of the experimental absorption and luminescence spectra are assigned to calculated energies of quantum-confined transitions with very good agreement. It is shown that the employment of the δ-doping technique results in improved optical properties of doping superlattices.

Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10309-10314 ◽  
Author(s):  
Chang-Ho Choi ◽  
Jenna Y. Gorecki ◽  
Zhen Fang ◽  
Marshall Allen ◽  
Shujie Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
First Time

Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.

Atomic nitrogen doping and p-type conduction in SnO2

2009 ◽  
Vol 95 (22) ◽  
pp. 222112 ◽  
Author(s):  
S. S. Pan ◽  
G. H. Li ◽  
L. B. Wang ◽  
Y. D. Shen ◽  
Y. Wang ◽  
...  
Keyword(s):  
Nitrogen Doping ◽  
Atomic Nitrogen ◽  
P Type ◽  
Type Conduction
Sign in / Sign up

Export Citation Format

Share Document