Conductivity Control of AlGaN. Fabrication of AlGaN/GaN Multi-Heterośtructure and their Application to UV/Blue Light Emitting Devices

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Electrical Properties ◽  
Size Effect ◽  
High Quality ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Size ◽  
Junction Type ◽  
P Type ◽  
First Time ◽  
Type Conduction

ABSTRACTThe method for controlling the electrical properties of n-type GaN and AIGaN have been established. Both GaN and AIGaN films having p - type conduction have been realized for the first time. High quality AIGaN/GaN mu I t i-he t er ostrueture showing clear quantum size effect has been fabricated. P-n junction type UV/blue LED with double he t e ros t rue ture have been developed for the first time.

FORMATION OF MAGNETIC GaAs:Mn LAYERS FOR InGaAs/GaAs LIGHT EMITTING QUANTUM-SIZE STRUCTURES

2007 ◽  
Vol 06 (03n04) ◽  
pp. 221-224 ◽  
Author(s):  
M. V. DOROKHIN ◽  
B. N. ZVONKOV ◽  
YU. A. DANILOV ◽  
V. V. PODOLSKII ◽  
P. B. DEMINA ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Light Emitting ◽  
Ferromagnetic Properties ◽  
Light Emitting Devices ◽  
Quantum Size

A possibility of the formation of light emitting devices, containing GaAs : Mn layers, by the MOCVD epitaxy process was demonstrated. It was shown that produced GaAs : Mn layers exhibit ferromagnetic properties at room temperature. Luminescent and electrical properties of the In(Ga)As / GaAs quantum-size heterostructures with incorporated GaAs : Mn layers were studied.

scholarly journals Unraveling the long-pursued Au144 structure by x-ray crystallography

2018 ◽  
Vol 4 (10) ◽  
pp. eaat7259 ◽  
Author(s):  
Nan Yan ◽  
Nan Xia ◽  
Lingwen Liao ◽  
Min Zhu ◽  
Fengming Jin ◽  
...  
Keyword(s):  
Metal Nanoparticles ◽  
Weak Interactions ◽  
Gold Nanoclusters ◽  
Atomic Level ◽  
High Quality ◽  
X Ray ◽  
X Ray Crystallography ◽  
Quantum Size ◽  
First Time

The transition from nanocluster to nanocrystal is a central issue in nanoscience. The atomic structure determination of metal nanoparticles in the transition size range is challenging and particularly important in understanding the quantum size effect at the atomic level. On the basis of the rationale that the intra- and interparticle weak interactions play critical roles in growing high-quality single crystals of metal nanoparticles, we have reproducibly obtained ideal crystals of Au144(SR)60 and successfully solved its structure by x-ray crystallography (XRC); this structure was theoretically predicted a decade ago and has long been pursued experimentally but without success until now. Here, XRC reveals an interesting Au12 hollow icosahedron in thiolated gold nanoclusters for the first time. The Au–Au bond length, close to that of bulk gold, shows better thermal extensibility than the other Au–Au bond lengths in Au144(SR)60, providing an atomic-level perspective because metal generally shows better thermal extensibility than nonmetal materials. Thus, our work not only reveals the mysterious, long experimentally pursued structure of a transition-sized nanoparticle but also has important implications for the growth of high-quality, single-crystal nanoparticles, as well as for the understanding of the thermal extensibility of metals from the perspective of chemical bonding.

Effect of outcouping layers on optical and electrical properties of top-emitting organic white light emitting devices

2015 ◽  
Vol 30 (3) ◽  
pp. 437-443
Author(s):  
王光华 WANG Guang-hua ◽  
季华夏 JI Hua-xia ◽  
张筱丹 ZHANG Xiao-dan ◽  
段瑜 DUAN Yu ◽  
孙浩 SUN Hao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
White Light ◽  
Optical And Electrical Properties ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1016 ◽  
Author(s):  
Kosuke Sato ◽  
Shinji Yasue ◽  
Yuya Ogino ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ultraviolet B ◽  
Light Emitting ◽  
Light Emitting Devices

New Structures and Materials for Next Generation Photonic Technology

2011 ◽  
Vol 120 ◽  
pp. 556-560
Author(s):  
D. H Zhang ◽  
T. Mei ◽  
D.Y. Tang ◽  
X. C. Yuan ◽  
T. P. Chen
Keyword(s):  
Light Source ◽  
Silicon On Insulator ◽  
Visible Range ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Manipulation ◽  
Loss Compensation ◽  
Photonic Circuit ◽  
Nano Crystal ◽  
First Time

We present the main results achieved in light source, light manipulation and imaging and sensing in our competitive research program. In light source, we have for the first time developed grapheme mode-locked lasers and dark pause lasers as well as nano-crystal Si based light emitting devices with colour tunable. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using semiconductor gain media was studied theoretically and demonstrated experimentally and the SPP propagation can be controlled through electrical pumping. Microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging and sensing, both SPP and metamaterial based lenses are developed and resolution far beyond diffraction limit in visible range has been realized. Broadband photodetectors based on dilute nitrides are also demonstrated.

scholarly journals White LEDs: Ultra‐Efficient and High‐Quality White Light‐Emitting Devices using Fluorescent Proteins in Aqueous Medium (Adv. Mater. Technol. 6/2020)

2020 ◽  
Vol 5 (6) ◽  
pp. 2070035
Author(s):  
Sadra Sadeghi ◽  
Rustamzhon Melikov ◽  
Deniz Conkar ◽  
Elif Nur Firat‐Karalar ◽  
Sedat Nizamoglu
Keyword(s):  
Aqueous Medium ◽  
White Light ◽  
Fluorescent Proteins ◽  
High Quality ◽  
Light Emitting ◽  
White Leds ◽  
Light Emitting Devices

Electrochemically triggered upconverted luminescence for light-emitting devices

2019 ◽  
Vol 55 (84) ◽  
pp. 12611-12614 ◽  
Author(s):  
Haruki Minami ◽  
Takuya Ichikawa ◽  
Kazuki Nakamura ◽  
Norihisa Kobayashi
Keyword(s):  
Energy Transfer ◽  
Triplet Energy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Triplet Energy Transfer ◽  
First Time ◽  
Triplet Triplet Annihilation

Electrochemically triggered upconverted luminescence through triplet–triplet energy transfer (TTET) and subsequent triplet–triplet annihilation upconversion (TTA-UC) is observed for the first time.

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Sign in / Sign up

Export Citation Format

Share Document