Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10309-10314 ◽  
Author(s):  
Chang-Ho Choi ◽  
Jenna Y. Gorecki ◽  
Zhen Fang ◽  
Marshall Allen ◽  
Shujie Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
First Time

Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate

Peripheral circuit designs using low-temperature p-type poly-Si thin-film transistors

2006 ◽  
Vol 14 (4) ◽  
pp. 403 ◽  
Author(s):  
Woo-Jin Nam ◽  
Jae-Hoon Lee ◽  
Hye-Jin Lee ◽  
Hee-Sun Shin ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
Si Thin Film

High‐Performance P‐Type Copper(I) Thiocyanate Thin Film Transistors Processed from Solution at Low Temperature

2019 ◽  
Vol 6 (19) ◽  
pp. 1900883 ◽  
Author(s):  
Yena Ji ◽  
Han Ju Lee ◽  
Seonjeong Lee ◽  
Kyung Gook Cho ◽  
Keun Hyung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
P Type

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

P-173L: Late-News Poster: A 2.2-inch QVGA System-on-Glass LCD Using P-Type Low Temperature Poly-Silicon Thin Film Transistors

2005 ◽  
Vol 36 (1) ◽  
pp. 352 ◽  
Author(s):  
Shin-Hung Yeh ◽  
Wein-Town Sun ◽  
Jian-Shen Yu ◽  
Chien-Chih Chen ◽  
Jargon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Poly Silicon ◽  
Late News ◽  
P Type

scholarly journals Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology

2012 ◽  
Vol 1426 ◽  
pp. 169-173 ◽  
Author(s):  
Miguel A. Dominguez ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
Mario Moreno
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Silicon Germanium ◽  
Thin Film Transistors ◽  
Transfer Characteristic ◽  
Gate Bias ◽  
Subthreshold Slope ◽  
Semiconductor Interface ◽  
Type Region ◽  
P Type

ABSTRACTWe present the fabrication and characterization of low-temperature ambipolar thin-film transistors (TFTs) based on hydrogenated amorphous silicon-germanium (a-SiGe:H) as active layer. Inverted staggered a-SiGe:H TFTs were fabricated on Corning glass. Spin-on glass silicon dioxide was used as gate dielectric to improve the quality of the dielectric-semiconductor interface. For positive gate bias the transfer characteristic showed n-type TFT behavior, while for negative gate bias p-type behavior was observed. The n-type region exhibits subthreshold slope of 0.45 V/decade while the p-type region shows a subthreshold slope of 0.49 V/decade.

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