Electron-phonon interaction in boron-doped silicon nanocrystals: Effect of Fano interference on the Raman spectrum

JETP Letters ◽  
2005 ◽  
Vol 82 (2) ◽  
pp. 86-88 ◽  
Author(s):  
V. A. Volodin ◽  
M. D. Efremov
Keyword(s):  
Raman Spectrum ◽  
Silicon Nanocrystals ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Boron Doped ◽  
Fano Interference ◽  
Doped Silicon

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

scholarly journals Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

2018 ◽  
Vol 9 ◽  
pp. 1501-1511 ◽  
Author(s):  
Daniel Hiller ◽  
Julian López-Vidrier ◽  
Keita Nomoto ◽  
Michael Wahl ◽  
Wolfgang Bock ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Silicon Oxynitride ◽  
Pure Silicon ◽  
Free Carriers ◽  
Boron Doped ◽  
Doped Silicon ◽  
B Doping

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

scholarly journals Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM

2016 ◽  
Vol 6 (04) ◽  
pp. 469
Author(s):  
Keita Nomoto ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
Hiroshi Sugimoto ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Boron Doped ◽  
Doped Silicon

Quantum Confined Electron–Phonon Interaction in Silicon Nanocrystals

Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1511-1516 ◽  
Author(s):  
D. M. Sagar ◽  
Joanna M. Atkin ◽  
Peter K. B. Palomaki ◽  
Nathan R. Neale ◽  
Jeffrey L. Blackburn ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Quantum Confined

Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide

2016 ◽  
Vol 6 (3) ◽  
pp. 283-288 ◽  
Author(s):  
Keita Nomoto ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
Hiroshi Sugimoto ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Boron Doped ◽  
Doped Silicon ◽  
Image Position

Abstract

Electron-phonon interaction in suspended highly doped silicon nanowires

2002 ◽  
Vol 13 (4) ◽  
pp. 491-494 ◽  
Author(s):  
A Tilke ◽  
L Pescini ◽  
A Erbe ◽  
H Lorenz ◽  
R H Blick
Keyword(s):  
Silicon Nanowires ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon
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