THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

Peculiarities of the Electron-Phonon Interaction in Graphite Containing Metallic Intercalated Layers

2010 ◽  
Vol 297-301 ◽  
pp. 75-81 ◽  
Author(s):  
Alexander Feher ◽  
S.B. Feodosyev ◽  
I.A. Gospodarev ◽  
V.I. Grishaev ◽  
K.V. Kravchenko ◽  
...  
Keyword(s):  
Jacobi Matrix ◽  
Local Density ◽  
Dynamic Properties ◽  
Electronic States ◽  
Bcs Theory ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Density Of Electronic States ◽  
Eliashberg Equation ◽  
Phonon Spectra

The calculation of the local density of electronic states of graphene with vacancies, using the method of Jacobi matrix, was performed. It was shown that for atoms in the sublattice with a vacancy the local density of electronic states conserves the Dirac singularity, similarly as in an ideal graphene. A quasi-Dirac singularity was observed also in the phonon spectra of graphite for the atom displacements in the direction perpendicular to layers. Changes of phonon spectra of graphite intercalated with various metals were analyzed. On the basis of our results and using the BCS theory and Eliashberg equation we proposed what dynamic properties an intercalated graphite system should show to obtain an increased Tc.

scholarly journals Temperature dependence of the dielectric function and critical points of α-SnS from 27 to 350 K

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hoang Tung Nguyen ◽  
Van Long Le ◽  
Thi Minh Hai Nguyen ◽  
Tae Jung Kim ◽  
Xuan Au Nguyen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Dielectric Function ◽  
Spectral Energy ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Temperature Dependences ◽  
Exciton Effect ◽  
Bose Einstein ◽  
Temperature Gradient Method

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

2012 ◽  
Vol 86 (19) ◽  
Author(s):  
J. Bhosale ◽  
A. K. Ramdas ◽  
A. Burger ◽  
A. Muñoz ◽  
A. H. Romero ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gaps ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

ELECTRON–PHONON INTERACTION AND ELECTRONIC STRUCTURE OF SMALL METAL CLUSTERS

1996 ◽  
Vol 03 (01) ◽  
pp. 489-492 ◽  
Author(s):  
JIJUN ZHAO ◽  
XIAOSHUANG CHEN ◽  
FENGQI LIU ◽  
GUANGHOU WANG
Keyword(s):  
Electronic Structures ◽  
Metal Clusters ◽  
Energy Levels ◽  
Iteration Process ◽  
Coupling Constant ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Size Dependent ◽  
Electron Phonon Coupling ◽  
Valence Electrons

The Su–Schrieffer–Heeger (SSH) Hamiltonian has been extended to study the electron–phonon interaction and the electronic structures of the alkali-like metal clusters. The eigen-energy levels of s valence electrons are obtained from a Hückel-like Hamiltonian including the correction of the electron–phonon interaction in the hopping integral, which is proportional to the variable of bond length. The self-consistent equations for electrons and phonons are solved adiabatically through an iteration process. The energy-level structures of an octahedral Cu6 cluster are calculated with variable electron–phonon coupling constant λ to investigate the influence of electron–phonon interaction on the lattice distortion and electronic structures of metal clusters. The size-dependent ionization potential for small Cun clusters are calculated and compared with the experimental results.

scholarly journals Фотоэлектрические свойства монокристаллов MnGaInS-=SUB=-4-=/SUB=-

2020 ◽  
Vol 90 (3) ◽  
pp. 427
Author(s):  
Н.Н. Нифтиев
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Band Gap ◽  
Wavelength Range ◽  
Spectral Distribution ◽  
Manganese Deficiency ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Acceptor Defect

The spectral distribution of photoconductivity and the temperature dependence of the photocurrent of monocrystals MnGaInS4 are studied. The intrinsic and extrinsic photoconductivities are revealed in the spectrum of photoconductivity. The wavelength range of 0.640–0.760 μm is shown when manganese deficiency in crystals appears and is due to an acceptor defect. The temperature dependence of the band gap in the monocrystals MnGaInS4 is related to the electron – phonon interaction. In the studied temperatures, increase in the photocurrent is associated with the thermal depletion of the attachment levels. The activation energy of the attachment levels is estimated.

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