Electron-phonon interaction inP-doped silicon at low temperatures

1980 ◽  
Vol 39 (1) ◽  
pp. 15-19 ◽  
Author(s):  
V. Radhakrishnan ◽  
P. C. Sharma ◽  
M. Singh
1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.


2002 ◽  
Vol 13 (4) ◽  
pp. 491-494 ◽  
Author(s):  
A Tilke ◽  
L Pescini ◽  
A Erbe ◽  
H Lorenz ◽  
R H Blick

1997 ◽  
Vol 491 ◽  
Author(s):  
J. L. Gavartin ◽  
D. J. Bacon

AbstractWe apply the frozen phonon and molecular dynamics methods within the semiempirical orthogonal tight-binding framework to study the anomalous behaviour of the (0001) optical longitudinal (LO) and transverse (TO) phonons in the low temperature hep phase of Ti, and the ⅔[111]L and ½[110]T1 phonons in the high temperature bec phase. We demonstrate that, in agreement with previous findings in Zr, the anomalous thermal frequency shifts in hep Ti are related to the strong coupling of the electron density of states (DOS) to the particular lattice distortions. The distortions along the bec ⅔[111]L and ½[110]T1 phonons also significantly affect the DOS, resulting in the instability of these modes at low temperatures and triggering the bcc-hep and bcc-ω phase transformations.


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