Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide

2016 ◽  
Vol 6 (3) ◽  
pp. 283-288 ◽  
Author(s):  
Keita Nomoto ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
Hiroshi Sugimoto ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Boron Doped ◽  
Doped Silicon ◽  
Image Position

Abstract

scholarly journals Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM

2016 ◽  
Vol 6 (04) ◽  
pp. 469
Author(s):  
Keita Nomoto ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
Hiroshi Sugimoto ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

2018 ◽  
Vol 9 ◽  
pp. 1501-1511 ◽  
Author(s):  
Daniel Hiller ◽  
Julian López-Vidrier ◽  
Keita Nomoto ◽  
Michael Wahl ◽  
Wolfgang Bock ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Silicon Oxide ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Silicon Oxynitride ◽  
Pure Silicon ◽  
Free Carriers ◽  
Boron Doped ◽  
Doped Silicon ◽  
B Doping

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

The investigation of boron-doped silicon using atom probe tomography

2010 ◽  
Vol 7 ◽  
pp. 012004 ◽  
Author(s):  
D Blavette ◽  
E Cadel ◽  
O Cojocaru-Mirédin ◽  
B Deconihout
Keyword(s):  
Atom Probe Tomography ◽  
Atom Probe ◽  
Boron Doped ◽  
Doped Silicon

Atom probe tomography of size-controlled phosphorus doped silicon nanocrystals

2016 ◽  
Vol 11 (1) ◽  
pp. 1600376 ◽  
Author(s):  
Keita Nomoto ◽  
Daniel Hiller ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Size Controlled

Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals

2016 ◽  
Vol 120 (31) ◽  
pp. 17845-17852 ◽  
Author(s):  
Keita Nomoto ◽  
Hiroshi Sugimoto ◽  
Andrew Breen ◽  
Anna V. Ceguerra ◽  
Takashi Kanno ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Silicon Nanocrystals ◽  
Atom Probe ◽  
Phosphorus Distribution ◽  
Doped Silicon ◽  
Atom Probe Tomography Analysis ◽  
Tomography Analysis

Atom probe tomography of nanoscale electronic materials

MRS Bulletin ◽  
2016 ◽  
Vol 41 (1) ◽  
pp. 30-34 ◽  
Author(s):  
D.J. Larson ◽  
T.J. Prosa ◽  
D.E. Perea ◽  
K. Inoue ◽  
D. Mangelinck
Keyword(s):  
Atom Probe Tomography ◽  
Electronic Materials ◽  
Atom Probe ◽  
Image Position

Abstract

scholarly journals Interfaces and defect composition at the near-atomic scale through atom probe tomography investigations

2018 ◽  
Vol 33 (23) ◽  
pp. 4018-4030 ◽  
Author(s):  
Baptiste Gault ◽  
Andrew J. Breen ◽  
Yanhong Chang ◽  
Junyang He ◽  
Eric A. Jägle ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Atom Probe ◽  
Atomic Scale ◽  
Image Position

Abstract

scholarly journals Distinguishing Meteoritic Nanodiamonds from Disordered Carbon Using Atom-Probe Tomography

2018 ◽  
Vol 26 (2) ◽  
pp. 18-23 ◽  
Author(s):  
J. B. Lewis ◽  
D. Isheim ◽  
C. Floss ◽  
D. N. Seidman
Keyword(s):  
Atom Probe Tomography ◽  
Atom Probe ◽  
Disordered Carbon ◽  
Image Position

Abstract

Sign in / Sign up

Export Citation Format

Share Document