Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

2000 ◽  
Vol 42 (8) ◽  
pp. 1422-1426 ◽  
Author(s):  
L. M. Sorokin ◽  
A. S. Tregubova ◽  
M. P. Shcheglov ◽  
A. A. Lebedev ◽  
N. S. Savkina
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers ◽  
Sublimation Growth

Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

1990 ◽  
Vol 57 (23) ◽  
pp. 2452-2454 ◽  
Author(s):  
K. Shahzad ◽  
J. Petruzzello ◽  
D. J. Olego ◽  
D. A. Cammack ◽  
J. M. Gaines
Keyword(s):  
Zinc Selenide ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiative Transitions

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

2006 ◽  
Vol 527-529 ◽  
pp. 391-394 ◽  
Author(s):  
Nicolas Camara ◽  
Konstantinos Zekentes ◽  
Edwige Bano ◽  
Aurelie Thuaire ◽  
Alexander A. Lebedev
Keyword(s):  
Hot Spots ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Triangular Shape ◽  
Sublimation Method ◽  
Soft Breakdown

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

1999 ◽  
Vol 61-62 ◽  
pp. 161-164 ◽  
Author(s):  
M. Syväjärvi ◽  
R. Yakimova ◽  
A. Kakanakova-Georgieva ◽  
M.F. MacMillan ◽  
E. Janzén
Keyword(s):  
Epitaxial Layers ◽  
Morphological Stability ◽  
Sublimation Growth

RECOMBINATION PARAMETERS OF CdxI1-xSe EPITAXIAL LAYERS FROM THE PHOTOCONDUCTIVE EFFECT

2001 ◽  
Vol 15 (27) ◽  
pp. 1225-1230 ◽  
Author(s):  
GEORGETA CERBANIC ◽  
IOAN BURDA ◽  
SIMION SIMON
Keyword(s):  
Substrate Temperature ◽  
Surface Recombination ◽  
Usual Method ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Crystal Perfection ◽  
Chemical Impurities ◽  
Complex Correlation ◽  
Gap States ◽  
Recombination Kinetics

The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The study of recombination kinetics and lifetime values in CdSe epitaxial layers is the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapor epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by photoconductive frequency-resolved spectroscopy (PCFRS), a usual method for such measurements. The lifetime spectra obtained show in all studied samples the presence of three types of recombinations: τ1 is due to band-to-band recombination, τ2 to surface recombination associated with chemical impurities and τ3 to surface recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.

scholarly journals Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

2013 ◽  
Vol 113 (22) ◽  
pp. 223502 ◽  
Author(s):  
M. Yazdanfar ◽  
I. G. Ivanov ◽  
H. Pedersen ◽  
O. Kordina ◽  
E. Janzén
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions

2000 ◽  
Vol 609 ◽  
Author(s):  
Lars Oberbeck ◽  
Thomas A. Wagner ◽  
Ralf B. Bergmann
Keyword(s):  
Epitaxial Films ◽  
Thin Film Solar Cells ◽  
High Rate ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
High Deposition Rate ◽  
Extended Defects ◽  
Microelectronic Devices ◽  
Silicon Ions ◽  
Inhomogeneous Density

ABSTRACTIon-assisted deposition (IAD) enables low temperature (≥ 435°C), high-rate (≤ 0.5 μm/min) epitaxial growth of silicon films. Therefore, IAD is an interesting deposition technique for microelectronic devices and thin film solar cells. The Hall-mobility of monocrystalline epitaxial layers increases with deposition temperature Tdep and reaches values comparable to those of bulk Si at Tdep ≥ 540°C. Polycrystalline epitaxial layers exhibit inhomogeneous electrical properties, as shown by Light Beam Induced Current measurements. Recombination within the grains dominates over recombination at grain boundaries. Secco etching identifies an inhomogeneous density of extended structural defects in the polycrystalline epitaxial layers and in the substrate. A major part of the extended defects in the epitaxial layers originates from defects in the substrate.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

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