Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

2014 ◽  
Vol 778-780 ◽  
pp. 13-16 ◽  
Author(s):  
Nikolaos Tsavdaris ◽  
Kanaparin Ariyawong ◽  
Odette Chaix-Pluchery ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Thermodynamic Analysis ◽  
Bulk Crystal ◽  
Nucleation Theory ◽  
Growth Time ◽  
Crystal Shape ◽  
Bulk Crystal Growth ◽  
Sublimation Method ◽  
Thin Lamella

We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theory is used towards the understanding of the experimental results. Whether it is a thin lamella or an inclusion, it is found that the polytype transitions systematically occur on the (0001) facet. This suggests that the polytype switch takes place through classical 2D nucleation at the facet. We will show that two criteria must be fulfilled for the occurrence of a foreign polytype: i) minimization of nucleation energy and ii) presence of a facet. This is directly depending on the crystal shape (convex or concave) and its evolution with growth time.

Dislocation Behavior in Bulk Crystals Grown by TSSG Method

2018 ◽  
Vol 924 ◽  
pp. 39-42 ◽  
Author(s):  
Kazuaki Seki ◽  
Kazuhiko Kusunoki ◽  
Yutaka Kishida ◽  
Hiroshi Kaido ◽  
Koji Moriguchi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Conversion Efficiency ◽  
Solution Method ◽  
Bulk Crystal ◽  
Threading Dislocations ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
X Ray ◽  
Bulk Growth ◽  
Dislocation Behavior

The dislocation behavior during bulk crystal growth on the 4H-SiC (000-1) C-face using the solution method was investigated. A 2 inch wafer with a 4° off angle was fabricated from a bulk crystal grown by the TSSG method, and the dislocations in the crystal were evaluated using synchrotron X-ray topography and TEM observation. From the topograph images, it was found that the TSD density remarkably decreased as the growth progressed. Furthermore, the TEM observation suggested that TSD decreases as the threading dislocations convert to in-plane defects toward the center of the crystal. Conventionally, it was considered that conversion of threading dislocations hardly occurs in solution growth on the C-face. However, it is thought that this phenomenon was not observable because the conversion efficiency is remarkably low. We speculate that dislocations may be transformed by suddenly making macrosteps during bulk growth.

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

2003 ◽  
Vol 433-436 ◽  
pp. 51-54 ◽  
Author(s):  
Matthias Bickermann ◽  
Dieter Hofmann ◽  
Thomas L. Straubinger ◽  
Roland Weingärtner ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Vanadium Doping

GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTH

2004 ◽  
Vol 14 (01) ◽  
pp. 51-62 ◽  
Author(s):  
P. R. TAVERNIER ◽  
E. V. ETZKORN ◽  
D. R. CLARKE
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Bulk Crystal Growth ◽  
Low Dislocation Density ◽  
Threading Dislocation Density ◽  
Compliant Layer

The essential steps required to create thick GaN films and seed crystals for bulk crystal growth are described. These include the growth of low dislocation density GaN films by hydride vapor phase epitaxy and the separation of films from their growth substrates. Also addressed are issues of processing thin and thick films to create compliant layer substrates for thick film HVPE growth and chemical mechanical polishing methods to enhance surface morphology and remove material damage free. Growth of both gallium and nitrogen polar films is discussed with key issues identified regarding polarity inversion during growth and impurity incorporation along the -c growth direction. These are illustrated with examples that emphasize the growth of material with low threading dislocation density.

Bulk crystal growth of cubic silicon carbide by sublimation epitaxy

2003 ◽  
Vol 249 (1-2) ◽  
pp. 216-221 ◽  
Author(s):  
Tomoaki Furusho ◽  
Makoto Sasaki ◽  
Satoru Ohshima ◽  
Shigehiro Nishino
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Cubic Silicon Carbide

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

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