scholarly journals Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

2013 ◽  
Vol 113 (22) ◽  
pp. 223502 ◽  
Author(s):  
M. Yazdanfar ◽  
I. G. Ivanov ◽  
H. Pedersen ◽  
O. Kordina ◽  
E. Janzén
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

2000 ◽  
Vol 42 (8) ◽  
pp. 1422-1426 ◽  
Author(s):  
L. M. Sorokin ◽  
A. S. Tregubova ◽  
M. P. Shcheglov ◽  
A. A. Lebedev ◽  
N. S. Savkina
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers ◽  
Sublimation Growth

Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

1990 ◽  
Vol 57 (23) ◽  
pp. 2452-2454 ◽  
Author(s):  
K. Shahzad ◽  
J. Petruzzello ◽  
D. J. Olego ◽  
D. A. Cammack ◽  
J. M. Gaines
Keyword(s):  
Zinc Selenide ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiative Transitions

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

2006 ◽  
Vol 527-529 ◽  
pp. 391-394 ◽  
Author(s):  
Nicolas Camara ◽  
Konstantinos Zekentes ◽  
Edwige Bano ◽  
Aurelie Thuaire ◽  
Alexander A. Lebedev
Keyword(s):  
Hot Spots ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Triangular Shape ◽  
Sublimation Method ◽  
Soft Breakdown

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

RECOMBINATION PARAMETERS OF CdxI1-xSe EPITAXIAL LAYERS FROM THE PHOTOCONDUCTIVE EFFECT

2001 ◽  
Vol 15 (27) ◽  
pp. 1225-1230 ◽  
Author(s):  
GEORGETA CERBANIC ◽  
IOAN BURDA ◽  
SIMION SIMON
Keyword(s):  
Substrate Temperature ◽  
Surface Recombination ◽  
Usual Method ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Crystal Perfection ◽  
Chemical Impurities ◽  
Complex Correlation ◽  
Gap States ◽  
Recombination Kinetics

The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The study of recombination kinetics and lifetime values in CdSe epitaxial layers is the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapor epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by photoconductive frequency-resolved spectroscopy (PCFRS), a usual method for such measurements. The lifetime spectra obtained show in all studied samples the presence of three types of recombinations: τ1 is due to band-to-band recombination, τ2 to surface recombination associated with chemical impurities and τ3 to surface recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions

2000 ◽  
Vol 609 ◽  
Author(s):  
Lars Oberbeck ◽  
Thomas A. Wagner ◽  
Ralf B. Bergmann
Keyword(s):  
Epitaxial Films ◽  
Thin Film Solar Cells ◽  
High Rate ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
High Deposition Rate ◽  
Extended Defects ◽  
Microelectronic Devices ◽  
Silicon Ions ◽  
Inhomogeneous Density

ABSTRACTIon-assisted deposition (IAD) enables low temperature (≥ 435°C), high-rate (≤ 0.5 μm/min) epitaxial growth of silicon films. Therefore, IAD is an interesting deposition technique for microelectronic devices and thin film solar cells. The Hall-mobility of monocrystalline epitaxial layers increases with deposition temperature Tdep and reaches values comparable to those of bulk Si at Tdep ≥ 540°C. Polycrystalline epitaxial layers exhibit inhomogeneous electrical properties, as shown by Light Beam Induced Current measurements. Recombination within the grains dominates over recombination at grain boundaries. Secco etching identifies an inhomogeneous density of extended structural defects in the polycrystalline epitaxial layers and in the substrate. A major part of the extended defects in the epitaxial layers originates from defects in the substrate.

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC

2020 ◽  
Vol 1004 ◽  
pp. 278-283
Author(s):  
Lev V. Shakhov ◽  
Alexander A. Lebedev ◽  
Natalia. V. Seredova ◽  
Sergey P. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  
Keyword(s):  
Single Crystals ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiation Defects ◽  
Photoluminescence Spectra ◽  
Structural Perfection ◽  
Twin Boundaries ◽  
Pl Spectra ◽  
Donor Acceptor

The photoluminescence spectra were studied in 3C-SiC / 4H-SiC heterostructures and single crystals of 3C-SiC. It was shown that 3C-SiC epitaxial layers grown on 4H-SiC substrates have significantly less structural perfection than 3C-SiC single crystals. It was found that doping with aluminum leads to the appearance of characteristic photoluminescence (PL) both in the epitaxial layers and in 3C-SiC single crystals. At the same time, the irradiation of the epitaxial layers does not lead to the appearance of “defective PL (DFL), as is observed for single crystals. It was suggested that the twin boundaries existing in 3C-SiC epitaxial layers could serve as getters of radiation defects that are components of donor – acceptor pairs (DAP) responsible for DFL.

Structural Defects in Mg-doped GaN and AlGaN grown by MOCVD

2002 ◽  
Vol 743 ◽  
Author(s):  
S. Tomiya ◽  
S. Goto ◽  
M. Takeya ◽  
M. Ikeda
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Transmission Electron ◽  
The Matrix ◽  
Metal Organic ◽  
Transmission Electron Microscope Analysis ◽  
Mg Doped

ABSTRACTWe have investigated the structural defects formed in Mg-doped GaN and AlGaN epitaxial layers grown by metal organic chemical vapor deposition. These defects have an inverse pyramidal shape and appear when the Mg concentration [Mg] is higher than ∼4×1019/cm3. The density of the defects increases as [Mg] increases, but the size of the defects becomes smaller as [Mg] increases. The density of the defects also has a strong correlation with the hydrogen concentration in the epitaxial layers. Transmission electron microscope analysis reveals that the defects have an inversion operation to the matrix and that their boundaries are Mg-rich. We also propose a model for defect formation.

Sign in / Sign up

Export Citation Format

Share Document