Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

1990 ◽  
Vol 57 (23) ◽  
pp. 2452-2454 ◽  
Author(s):  
K. Shahzad ◽  
J. Petruzzello ◽  
D. J. Olego ◽  
D. A. Cammack ◽  
J. M. Gaines
Keyword(s):  
Zinc Selenide ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Radiative Transitions

Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum

2000 ◽  
Vol 42 (8) ◽  
pp. 1422-1426 ◽  
Author(s):  
L. M. Sorokin ◽  
A. S. Tregubova ◽  
M. P. Shcheglov ◽  
A. A. Lebedev ◽  
N. S. Savkina
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers ◽  
Sublimation Growth

Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

2016 ◽  
Vol 31 (9) ◽  
pp. 095009 ◽  
Author(s):  
L Rigutti ◽  
L Mancini ◽  
W Lefebvre ◽  
J Houard ◽  
D Hernàndez-Maldonado ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Layers ◽  
Radiative Transitions

Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method

2006 ◽  
Vol 527-529 ◽  
pp. 391-394 ◽  
Author(s):  
Nicolas Camara ◽  
Konstantinos Zekentes ◽  
Edwige Bano ◽  
Aurelie Thuaire ◽  
Alexander A. Lebedev
Keyword(s):  
Hot Spots ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Pin Diodes ◽  
Triangular Shape ◽  
Sublimation Method ◽  
Soft Breakdown

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

RECOMBINATION PARAMETERS OF CdxI1-xSe EPITAXIAL LAYERS FROM THE PHOTOCONDUCTIVE EFFECT

2001 ◽  
Vol 15 (27) ◽  
pp. 1225-1230 ◽  
Author(s):  
GEORGETA CERBANIC ◽  
IOAN BURDA ◽  
SIMION SIMON
Keyword(s):  
Substrate Temperature ◽  
Surface Recombination ◽  
Usual Method ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Crystal Perfection ◽  
Chemical Impurities ◽  
Complex Correlation ◽  
Gap States ◽  
Recombination Kinetics

The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The study of recombination kinetics and lifetime values in CdSe epitaxial layers is the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapor epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by photoconductive frequency-resolved spectroscopy (PCFRS), a usual method for such measurements. The lifetime spectra obtained show in all studied samples the presence of three types of recombinations: τ1 is due to band-to-band recombination, τ2 to surface recombination associated with chemical impurities and τ3 to surface recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.

scholarly journals Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

2013 ◽  
Vol 113 (22) ◽  
pp. 223502 ◽  
Author(s):  
M. Yazdanfar ◽  
I. G. Ivanov ◽  
H. Pedersen ◽  
O. Kordina ◽  
E. Janzén
Keyword(s):  
Structural Defects ◽  
Epitaxial Layers

Optical and vibrational properties of doped zinc selenide epitaxial layers

1992 ◽  
Vol 52 (1-4) ◽  
pp. 17-39 ◽  
Author(s):  
Khalid Shahzad ◽  
Diego J. Olego ◽  
John Petruzzello
Keyword(s):  
Zinc Selenide ◽  
Vibrational Properties ◽  
Epitaxial Layers

Characterization of Gasb-Based Alloy Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
H. Uekita ◽  
N. Kitamura ◽  
M. Ichimura ◽  
A. Usami ◽  
T. Wada
Keyword(s):  
Raman Spectroscopy ◽  
Liquid Phase ◽  
Epitaxial Layer ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Alloy Semiconductors

ABSTRACTGaSb, AlxGa1-xSb, and AlxGa1-xSb epitaxial layers were grown by the liquid-phase epitaxy and characterized by photoluminescence, Raman spectroscopy, and double-crystal X-ray diffraction. The concentration of residual acceptors which are related to structural defects decreased with lowering growth temperature, but the GaSb epitaxial layer grown at an extremely low temperature of 270°C had poor crystalline quality. The AlxGa1-xSb (x≥0.15) and AlxGa1-xSb (x=0.02) epitaxial layers grown at 270 °C, however, had much better quality than the GaSb epitaxial layer grown at the same temperature.

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