Oxygen precipitates and the formation of thermal donors in silicon

1998 ◽  
Vol 32 (6) ◽  
pp. 640-641
Author(s):  
N. V. Vabishchevich ◽  
D. I. Brinkevich ◽  
V. S. Prosolovich
Keyword(s):  
Oxygen Precipitates

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Roles for A Precursor Oxide Phase in The Siting, Shaping, and Shrinking of Oxygen Precipitates

1985 ◽  
Vol 59 ◽  
Author(s):  
P. Fraundorf
Keyword(s):  
Phase Transition ◽  
Strain Field ◽  
Oxide Phase ◽  
Induction Effect ◽  
First Order ◽  
First Order Phase Transition ◽  
Precursor Phase ◽  
Precipitate Shape ◽  
Oxygen Precipitates ◽  
First Order Phase

ABSTRACTThree separate “anomalous” effects in the precipitation of oxygen in silicon may be explained if typical poorly-crystallized platelet oxygen precipitates begin as tiny crystalline clusters. The first anomaly, sometimes referred to as the induction effect, may be explained if one postulates the existence of kinetically stable precipitate embryos (seeds) containing no more than one or two oxygen atoms. We show here that such a postulate, coupled with observations, places rather specific constraints on binding energy as a function of size for such tiny clusters. The second and third anomalies, arising in precipitate shape and retrogrowth behavior dependences, respectively, may be explained if one postulates the existence of a relatively dense precursor phase which undergoes first order phase transition, following otherwise classical rules, to the final-stage amorphous oxide normally found. In this case, both precipitate shape and strain field can be interpreted as a barometer of the interstitial ambient during key periods in a precipitate's history.

The Origin of Photoluminescence from Oxygen Precipitates Nucleated at Low Temperature in Semiconductor Silicon

2004 ◽  
Vol 151 (12) ◽  
pp. G866 ◽  
Author(s):  
E. Leoni ◽  
L. Martinelli ◽  
S. Binetti ◽  
G. Borionetti ◽  
S. Pizzini
Keyword(s):  
Low Temperature ◽  
Semiconductor Silicon ◽  
Oxygen Precipitates

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Depth profiles of oxygen precipitates in nitride-coated silicon wafers subjected to rapid thermal annealing

2013 ◽  
Vol 114 (4) ◽  
pp. 043520 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster ◽  
TaeHyeong Kim ◽  
SoonSung Park ◽  
T. Torack
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Depth Profiles ◽  
Oxygen Precipitates
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