The Origin of Photoluminescence from Oxygen Precipitates Nucleated at Low Temperature in Semiconductor Silicon

2004 ◽  
Vol 151 (12) ◽  
pp. G866 ◽  
Author(s):  
E. Leoni ◽  
L. Martinelli ◽  
S. Binetti ◽  
G. Borionetti ◽  
S. Pizzini
Keyword(s):  
Low Temperature ◽  
Semiconductor Silicon ◽  
Oxygen Precipitates

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Generation and Dislocations at the Interface Between Oxygen Precipitates and Silicon

1975 ◽  
Vol 33 ◽  
pp. 252-253
Author(s):  
T. Y. Tan ◽  
W. K. Tice
Keyword(s):  
Dendritic Growth ◽  
Stress Relief ◽  
Silicon Wafers ◽  
Semiconductor Silicon ◽  
Square Plate ◽  
Oxygen Precipitates ◽  
Silicon Oxygen

The generation of dislocations at the interface between misfitting particles and a ductile matrix by the stress relief mechanism of prismatic punching was first discussed by Seitz and observed by others in AgCl and Al. In this paper we report the observation of such-phenomena in semiconductor silicon. Oxygen rich (∼2x1018 at./cc) Czochralski grown <001> silicon wafers were annealed at 1050°C for 60 hours and slowly cooled. TEM observations show that the alleged SixOy type precipitates are a few thousand Angstroms in size and are plate-like in morphology. The precipitate forms by the nucleation of a cross-shaped ribbon on a {001} plane with the ribbon branches along the two <100> directions in the appropriate {001} plane. The ribbon branches are widened by dendritic growth until the completion of a square plate on a {001} plane with sides along the two appropriate <110> directions. Thickening of plates in the <001> direction is also common, and sometimes two or more plates having mutually perpendicular {001} hibit planes grow together, Fig. 1.

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

2007 ◽  
Vol 131-133 ◽  
pp. 393-398 ◽  
Author(s):  
Xin Zhu ◽  
De Ren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Lei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Furnace Annealing ◽  
Thermal Donor ◽  
Low Temperature Annealing ◽  
Initial Stage ◽  
Donor Formation ◽  
Oxygen Precipitates ◽  
Ge Doping

The thermal donor formation at 425oC - 450oC in Ge doped Czochralski (GCZ) silicon having about 1016 cm-3 Ge content pretreated by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) has been investigated using low-temperature infrared spectroscopy (LT-IR). The measurements prove that lightly Ge doping can enhance the formation of thermal double donors in the initial stage of the low temperature annealing after RTA process. Ge induced additional grown-in oxygen precipitates during silicon ingot growth and the abundant self-interstitials during RTA may be the reason for the enhancement. However, after extending the annealing time at the low temperatures, the thermal donor concentration in the GCZ silicon is lower than that in the conventional CZ silicon. In final, the mechanism is also discussed.

Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing

1999 ◽  
Vol 67-68 ◽  
pp. 39-44
Author(s):  
Eugene B. Yakimov ◽  
Olga V. Feklisova ◽  
Maurizio Acciarri ◽  
Anna Cavallini ◽  
Sergio Pizzini
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Low Temperature Annealing ◽  
Oxygen Precipitates

Beam Injection Studies of Dislocations and Oxygen Precipitates in Semiconductor Silicon

2001 ◽  
Vol 78-79 ◽  
pp. 57-64 ◽  
Author(s):  
Sergio Pizzini ◽  
Simona Binetti ◽  
Alessia Le Donne ◽  
E. Leoni ◽  
Maurizio Acciarri ◽  
...  
Keyword(s):  
Beam Injection ◽  
Semiconductor Silicon ◽  
Oxygen Precipitates

Intrinsic Gettering of Nickel and Copper for Advanced Low Temperature Device Processes

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ogushi ◽  
N. Reilly ◽  
S. Sadamitsu ◽  
Y. Koike ◽  
M. Sano
Keyword(s):  
Low Temperature ◽  
Strong Dependence ◽  
Oxygen Precipitate ◽  
Cu Contamination ◽  
Temperature Deposition ◽  
Contamination Levels ◽  
Oxygen Precipitates ◽  
Generation Lifetime ◽  
Or Gate ◽  
Low Temperature Process

AbstractThe formation and dissolution of Ni and Cu silicides were investigated to determine effective intrinsic gettering (IG) for low temperature processes. Ni formed silicides easily at low contamination levels and these silicides formed the nuclei for OSF during subsequent annealing at temperatures above 1000°C. Ni silicides were dissolved and gettered during low temperature deposition of a poly-back seal (PBS) at 620°C, whereas Cu silicides, once formed, easily induced secondary defects on further annealing even at low temperatures and could not be dissolved or gettered by PBS. The sizes and densities of oxygen precipitates necessary to intrinsically getter Ni and Cu contamination levels of 1012atoms/cm2 were also investigated with respect to generation lifetime. Cu contamination at this level did not degrade generation lifetime or gate oxide integrity (GOI) yield. For Ni contaminated samples, a strong dependence of generation lifetime on both oxygen precipitate density and size was observed. Effective IG for Ni during a low temperature process was demonstrated using a 2-step low temperature process simulation.

Exsolution and inversion in pigeonite from the Whin Sill, Northern England

1978 ◽  
Vol 36 (1) ◽  
pp. 474-475
Author(s):  
P.P.K. Smith
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Homogeneous Nucleation ◽  
Silicate Mineral ◽  
Antiphase Boundaries ◽  
Two Phase ◽  
Primitive Form ◽  
The Core ◽  
Nucleation Mechanisms ◽  
And Inversion

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.

Low temperature x-ray microanalysis of frozen-hydrated tobacco leaves

1984 ◽  
Vol 42 ◽  
pp. 284-285
Author(s):  
S. Edith Taylor ◽  
Patrick Echlin ◽  
May McKoon ◽  
Thomas L. Hayes
Keyword(s):  
Low Temperature ◽  
Lemna Minor ◽  
Root Tips ◽  
Tobacco Leaves ◽  
X Ray ◽  
Whole Cells ◽  
Carbon Coated ◽  
The Right ◽  
Beam Currents ◽  
The University

Low temperature x-ray microanalysis (LTXM) of solid biological materials has been documented for Lemna minor L. root tips. This discussion will be limited to a demonstration of LTXM for measuring relative elemental distributions of P,S,Cl and K species within whole cells of tobacco leaves.Mature Wisconsin-38 tobacco was grown in the greenhouse at the University of California, Berkeley and picked daily from the mid-stalk position (leaf #9). The tissue was excised from the right of the mid rib and rapidly frozen in liquid nitrogen slush. It was then placed into an Amray biochamber and maintained at 103K. Fracture faces of the tissue were prepared and carbon-coated in the biochamber. The prepared sample was transferred from the biochamber to the Amray 1000A SEM equipped with a cold stage to maintain low temperatures at 103K. Analyses were performed using a tungsten source with accelerating voltages of 17.5 to 20 KV and beam currents from 1-2nA.

Bulk standards for low-temperature biological x-ray microanalysis

1984 ◽  
Vol 42 ◽  
pp. 282-283
Author(s):  
P. Echlin ◽  
M. McKoon ◽  
E.S. Taylor ◽  
C.E. Thomas ◽  
K.L. Maloney ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Analytical Method ◽  
Salt Solutions ◽  
Absolute Concentration ◽  
Cooling Process ◽  
X Ray ◽  
The Absolute ◽  
Analytical Procedures ◽  
Electrical Conductors

Although sections of frozen salt solutions have been used as standards for x-ray microanalysis, such solutions are less useful when analysed in the bulk form. They are poor thermal and electrical conductors and severe phase separation occurs during the cooling process. Following a suggestion by Whitecross et al we have made up a series of salt solutions containing a small amount of graphite to improve the sample conductivity. In addition, we have incorporated a polymer to ensure the formation of microcrystalline ice and a consequent homogenity of salt dispersion within the frozen matrix. The mixtures have been used to standardize the analytical procedures applied to frozen hydrated bulk specimens based on the peak/background analytical method and to measure the absolute concentration of elements in developing roots.

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