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Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy
Applied Physics Letters
◽
10.1063/1.103699
◽
1990
◽
Vol 57
(4)
◽
pp. 383-385
◽
Cited By ~ 55
Author(s):
B. F. Levine
◽
C. G. Bethea
◽
V. O. Shen
◽
R. J. Malik
Keyword(s):
Electron Beam
◽
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
◽
Beam Source
◽
Long Wavelength
Download Full-text
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References
ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES
Le Journal de Physique Colloques
◽
10.1051/jphyscol:19884127
◽
1988
◽
Vol 49
(C4)
◽
pp. C4-607-C4-614
Author(s):
R. J. MALIK
◽
A. F.J. LEVI
◽
B. F. LEVINE
◽
R. C. MILLER
◽
D. V. LANG
◽
...
Keyword(s):
Electron Beam
◽
Molecular Beam Epitaxy
◽
Band Gap
◽
Molecular Beam
◽
Beam Source
◽
Device Structures
◽
Graded Band Gap
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High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3
Applied Physics Express
◽
10.7567/apex.11.091003
◽
2018
◽
Vol 11
(9)
◽
pp. 091003
◽
Cited By ~ 11
Author(s):
Valentin N. Jmerik
◽
Dmitrii V. Nechaev
◽
Alexey A. Toropov
◽
Evgenii A. Evropeitsev
◽
Vladimir I. Kozlovsky
◽
...
Keyword(s):
Electron Beam
◽
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
◽
High Efficiency
◽
Multiple Quantum Wells
◽
Multiple Quantum
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Advanced electron beam source for ultrahigh vacuum (molecular beam epitaxy) and high vacuum applications of thin film deposition
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
◽
10.1116/1.579026
◽
1994
◽
Vol 12
(4)
◽
pp. 1628-1630
◽
Cited By ~ 1
Author(s):
J. W. Moore
◽
N. K. Tsujimoto
Keyword(s):
Thin Film
◽
Electron Beam
◽
Molecular Beam Epitaxy
◽
Molecular Beam
◽
High Vacuum
◽
Ultrahigh Vacuum
◽
Thin Film Deposition
◽
Film Deposition
◽
Beam Source
Download Full-text
Electron Beam Source Molecular Beam Epitaxy Of Al x Ga 1-x As Graded Band Gap Device Structures
10.1117/12.947365
◽
1988
◽
Author(s):
R. J. Malik
◽
A. F. J. Levi
◽
B. F. Levine
◽
R. C. Miller
◽
D. V. Lang
◽
...
Keyword(s):
Electron Beam
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Molecular Beam Epitaxy
◽
Band Gap
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Molecular Beam
◽
Beam Source
◽
Device Structures
◽
Graded Band Gap
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Electron beam source molecular-beam epitaxy of III–V compounds
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.583771
◽
1987
◽
Vol 5
(3)
◽
pp. 722
◽
Cited By ~ 18
Author(s):
Roger J. Malik
Keyword(s):
Electron Beam
◽
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Beam Source
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Electron Beam Source Molecular Beam Epitaxy of AlxGal−xAs Graded Band Gap Device Structures
Band Structure Engineering in Semiconductor Microstructures - NATO ASI Series
◽
10.1007/978-1-4757-0770-0_18
◽
1989
◽
pp. 217-223
Author(s):
R. J. Malik
◽
A. F. J. Levi
◽
B. F. Levine
◽
R. C. Miller
◽
D. V. Lang
◽
...
Keyword(s):
Electron Beam
◽
Molecular Beam Epitaxy
◽
Band Gap
◽
Molecular Beam
◽
Beam Source
◽
Device Structures
◽
Graded Band Gap
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Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates
Semiconductors
◽
10.1134/1.1187214
◽
1997
◽
Vol 31
(6)
◽
pp. 545
◽
Cited By ~ 3
Author(s):
V. I. Kozlovskiı̆
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry
Applied Physics Letters
◽
10.1063/5.0027364
◽
2020
◽
Vol 117
(23)
◽
pp. 232107
Author(s):
Alyssa L. Mock
◽
Alan G. Jacobs
◽
Eric N. Jin
◽
Matthew T. Hardy
◽
Marko J. Tadjer
Keyword(s):
Dielectric Properties
◽
Molecular Beam Epitaxy
◽
Spectroscopic Ellipsometry
◽
Optical Phonon
◽
Molecular Beam
◽
Phonon Modes
◽
Long Wavelength
◽
Infrared Spectroscopic
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GaAs/AlGaAs quantum wells grown over epitaxial CoAl layers with molecular-beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.586115
◽
1992
◽
Vol 10
(2)
◽
pp. 783
◽
Cited By ~ 1
Author(s):
W. D. Goodhue
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
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Growth and Characterization of InGaN/GaN Multiple Quantum Wells on Ga-Polarity GaN by Plasma-Assisted Molecular Beam Epitaxy
physica status solidi (b)
◽
10.1002/1521-3951(200111)228:1<99::aid-pssb99>3.0.co;2-2
◽
2001
◽
Vol 228
(1)
◽
pp. 99-102
◽
Cited By ~ 3
Author(s):
X.Q. Shen
◽
T. Ide
◽
M. Shimizu
◽
F. Sasaki
◽
H. Okumura
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
◽
Multiple Quantum Wells
◽
Multiple Quantum
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