Model Based Inspection Of Integrated Circuit Patterns Using The Scanning Electron Microscope (Sem)

1987 ◽  
Author(s):  
Ali E. Kayaalp ◽  
Ramesh C. Jain
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuit ◽  
Model Based ◽  
Scanning Electron

Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing

2004 ◽  
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Contact Resistance ◽  
Integrated Circuit ◽  
Electrical Breakdown ◽  
Scanning Electron ◽  
Integrated Circuit Processing

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.

scholarly journals Automatic Integrated Circuit Die Positioning in the Scanning Electron Microscope

Scanning ◽  
2006 ◽  
Vol 24 (2) ◽  
pp. 86-91 ◽  
Author(s):  
H. W. Tan ◽  
J. C. H. Phang ◽  
J. T. L. Thong
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuit ◽  
Scanning Electron

Failure Analysis of FinFET Circuitry at GHz Speeds Using Voltage-Contrast and Stroboscopic Techniques on a Scanning Electron Microscope

2019 ◽  
Author(s):  
James Vickers ◽  
Seema Somani ◽  
Blake Freeman ◽  
Pete Carleson ◽  
Lubomír Tùma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Electrical Activity ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Contrast Mechanism ◽  
Voltage Contrast ◽  
Working Device ◽  
Scanning Electron

Abstract We report on using the voltage-contrast mechanism of a scanning electron microscope to probe electrical waveforms on FinFET transistors that are located within active integrated circuits. The FinFET devices are accessed from the backside of the integrated circuit, enabling electrical activity on any transistor within a working device to be probed. We demonstrate gigahertz-bandwidth probing at 10-nm resolution using a stroboscopic pulsed electron source.

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