A precise and automatic very large scale integrated circuit pattern linewidth measurement method using a scanning electron microscope

1986 ◽  
Vol 4 (2) ◽  
pp. 493 ◽  
Author(s):  
M. Miyoshi
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuit ◽  
Measurement Method ◽  
Large Scale ◽  
Linewidth Measurement ◽  
Scanning Electron

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing

2004 ◽  
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Contact Resistance ◽  
Integrated Circuit ◽  
Electrical Breakdown ◽  
Scanning Electron ◽  
Integrated Circuit Processing

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.

scholarly journals Automatic Integrated Circuit Die Positioning in the Scanning Electron Microscope

Scanning ◽  
2006 ◽  
Vol 24 (2) ◽  
pp. 86-91 ◽  
Author(s):  
H. W. Tan ◽  
J. C. H. Phang ◽  
J. T. L. Thong
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuit ◽  
Scanning Electron
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