Scanning electron microscope dimensional metrology using a model-based library

2005 ◽  
Vol 37 (11) ◽  
pp. 951-958 ◽  
Author(s):  
J. S. Villarrubia ◽  
A. E. Vladár ◽  
M. T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Dimensional Metrology ◽  
Model Based ◽  
Scanning Electron

Dimensional Characterizations Using Scanning Electron Microscope and Surface Improvement With Electrochemical Polishing of Additively Manufactured Microchannels

2021 ◽  
Vol 143 (4) ◽  
Author(s):  
Zheng Min ◽  
Yingjie Wu ◽  
Kailai Yang ◽  
Jin Xu ◽  
Sarwesh Narayan Parbat ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Computer Aided Design ◽  
Laser Sintering ◽  
Electrochemical Polishing ◽  
Dimensional Metrology ◽  
Channel Size ◽  
Printing Direction ◽  
Scanning Electron

Abstract Microchannel manufacturing is one of the fastest growing areas in advanced manufacturing with numerous applications, including turbine blade cooling structures, compact microchannel heat exchangers, and electronic cooling devices. Recent development of metallic additive manufacturing (AM) based on direct metal laser sintering technology is capable of fabricating microscale structures with high complexity and design flexibility. However, powder bed laser sintering process produces rough surface characteristics caused by hatch overlaps and particle attachments, leading to channel size reductions and rough surfaces. In this paper, dimensional metrology of cross-sectional views of multirow microchannels made by AM was conducted by a scanning electron microscope (SEM) at different locations along the printing direction. Channel size reduction, surface roughness, and circularity tolerance of the as-printed channels were analyzed based on micrographs captured by SEM. Results showed that both channel sizes and hole pitches affected the printing qualities of microchannels. The as-printed channel sizes reduced by more than 15% compared to the designed values. Two approaches were made in this paper to improve printing qualities. The first one was to redesign channel size in computer-aided design (CAD) model to make the as-printed channel sizes closer to the objective values. Electrochemical polishing (ECP) was then applied as a second way using sulfuric acid solutions. Surface roughness value was reduced by more than 40% after the ECP process.

Micron and Nanometer Measuring Methods Based on Metrological Scanning Electron Microscope

2014 ◽  
Vol 609-610 ◽  
pp. 1195-1200 ◽  
Author(s):  
Bo Hua Yin ◽  
Dai Xie Chen ◽  
Rui Xia ◽  
Liang Dong Wen ◽  
Hong Xue ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Semiconductor Device ◽  
Research Work ◽  
Detection Algorithm ◽  
Dimensional Metrology ◽  
Image Region ◽  
Sem Image ◽  
Image Edge ◽  
Scanning Electron

Micron and nanometer dimensional metrology is an important part of integrated circuits manufacturing system and nanofabrication research work. Semiconductor device feature size has shrunk from the micron to dozen of nanometers. How to watch the micro structure clearly, identify its edge, and measure its dimension accurately are the major issues that need to be research. In this paper, a metrological scanning electron microscope (M-SEM) system with precision stage and laser interferometer is presented. Furthermore, this paper focuses on demonstrating a metrological SEM image edge detection algorithm which is the essential part of the metrological SEM system to realize the measurement of line width. The procedure of the algorithm is that SEM image is first analyzed by noise type according to the histogram characteristics. Then the image noise is reduced by specific filters. Furthermore, a specific interesting object image region is selected and pixel gray level values of the region are obtained by line scan. SEM image edges are determined by the characteristic of the pixel information in two possible cases. This algorithm preserves the edge details of the original image and detects the image edge automatically in an easy and fast way.

Approaches to Quantitative Electron Detection in the Scanning Electron Microscope for Topographic Studies

1990 ◽  
Vol 48 (1) ◽  
pp. 370-371
Author(s):  
Jan Hejna
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Relief ◽  
Primary Beam ◽  
Dimensional Metrology ◽  
Backscattered Electrons ◽  
Dimensional Measurements ◽  
Backscattered Electron ◽  
Material Contrast ◽  
Scanning Electron

An electron signal in the scanning electron microscope (SEM) usually consists of contributions caused by different contrast mechanisms. The most common in practice are material and topographic contrasts. Quantification of material contrast is rather a simple matter. A backscattered electron detector placed over a specimen gives mainly material contrast which can be quantified by the use of a multichannel analyser like in the energy-dispersive x-ray spectrometry.In case of topographic contrast two problems arise. One of them is dimensional metrology, especially linewidth measurements in microelectronics, the second is reconstruction of a surface relief. The first problem needs detection conditions at which the results of SEM measurements correspond exactly with real dimensions, the second needs a signal which is related with a known formula to a local surface inclination and a procedure for converting the signal into the surface relief.Experiments in the SEM and Monte-Carlo calculations have shown that results of dimensional measurements depend on an energy of a primary beam, on a type of detected electrons (secondary electrons (SE) or backscattered electrons (BSE)) and on a type of a detector.The use of low primary beam voltages and BSE is advisable, The problem of a poor efficiency of BSE detectors at low primary beam voltages can be overcome by accelerating BSE, after they have passed through a grid rejecting SE, by high voltage applied to a scintillator in a BSE detector.

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