High Speed Document Scanner Using Charge Coupled Device (CCD) Image Sensors

1983 ◽  
Author(s):  
Masahiro Mori ◽  
Isao Kondo ◽  
Masakatsu Horie
Keyword(s):  
High Speed ◽  
Image Sensors ◽  
Charge Coupled Device ◽  
Ccd Image

Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

1992 ◽  
Vol 262 ◽  
Author(s):  
Biay-Cheng Hseih ◽  
S. Kosman ◽  
Y.C. Lo ◽  
K. Jayakar ◽  
M. Mehra ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Image Sensor ◽  
Image Sensors ◽  
Gate Electrode ◽  
Electrical And Optical Properties ◽  
Charge Coupled Device ◽  
Device Stability ◽  
Ccd Image Sensor ◽  
Ccd Image ◽  
Ito Films

ABSTRACTThe electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.

Probing Metal Defects in CCD Image Sensors

1995 ◽  
Vol 378 ◽  
Author(s):  
William C. McColgin ◽  
J. P. Lavine ◽  
C. V. Stancampiano
Keyword(s):  
Cross Sections ◽  
Dark Current ◽  
Deep Level ◽  
Energy Levels ◽  
Image Sensors ◽  
Current Generation ◽  
Charge Coupled Device ◽  
Iron Nickel ◽  
Relationship Of ◽  
Ccd Image

AbstractWe have investigated the role of heavy metals in causing visible pixel defects in Charge Coupled Device (CCD) image sensors. Using a technique we call dark current spectroscopy, we can probe for deep-level traps in the active areas of completed image sensors with a sensitivity of 1 × 109 traps/cm3 or better. Analysis of histograms of dark current images from these sensors shows that the presence of traps causes quantization in the dark current. Different metal traps have characteristic dark current generation rates that can identify the contaminant trap. By examining the temperature dependence of the dark current generation, we have calculated the energy levels and generation cross sections for gold, iron, nickel, and cobalt. Our results show the relationship of these traps to the “white spot” defects reported for image sensors.

Preliminary Characterization of Two High-Speed, Back-Illuminated CCD Image Sensors

2004 ◽  
pp. 33-40
Author(s):  
Morley M. Blouke ◽  
Denis L. Heidtmann ◽  
James Eriksen ◽  
Archibald Barter
Keyword(s):  
High Speed ◽  
Image Sensors ◽  
Preliminary Characterization ◽  
Ccd Image ◽  
Back Illuminated

CCD Image Sensors For High Speed Inspection Systems

1988 ◽  
Author(s):  
Savvas G. Chamberlain ◽  
William D. Washkurak ◽  
Brian C. Doody
Keyword(s):  
High Speed ◽  
Image Sensors ◽  
Inspection Systems ◽  
Ccd Image

Deep-Level Traps in CCD Image Sensors

1998 ◽  
Vol 510 ◽  
Author(s):  
William C. Mccolgin ◽  
James P. Lavine ◽  
Charles V. Stancampiano ◽  
Jeffrey B. Russell
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Device ◽  
Ccd Image

AbstractWe have extended by five the number of deep-level traps known to create dark current in charge-coupled device (CCD) image sensors. These include Mn, Pt, and three much weaker traps that are as yet unidentified. Using dark current spectroscopy (DCS) we show that the generation rates at 55°C range from 6400 electrons/s for Mn to only 2 electrons/s for the weakest trap, which lies 0.27 eV off mid-gap. These weak traps determine the bandwidths and resolution of the trap peaks seen in the dark current spectra.

Ultra High Speed CCD Image Sensors For Scanning Applications

1989 ◽  
Author(s):  
Brian C. Doody ◽  
N. Daryl Prince ◽  
Jeff Sainio
Keyword(s):  
High Speed ◽  
Image Sensors ◽  
Ultra High Speed ◽  
Ccd Image
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