Deep-Level Traps in CCD Image Sensors

1998 ◽  
Vol 510 ◽  
Author(s):  
William C. Mccolgin ◽  
James P. Lavine ◽  
Charles V. Stancampiano ◽  
Jeffrey B. Russell
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Device ◽  
Ccd Image

AbstractWe have extended by five the number of deep-level traps known to create dark current in charge-coupled device (CCD) image sensors. These include Mn, Pt, and three much weaker traps that are as yet unidentified. Using dark current spectroscopy (DCS) we show that the generation rates at 55°C range from 6400 electrons/s for Mn to only 2 electrons/s for the weakest trap, which lies 0.27 eV off mid-gap. These weak traps determine the bandwidths and resolution of the trap peaks seen in the dark current spectra.

Probing Metal Defects in CCD Image Sensors

1995 ◽  
Vol 378 ◽  
Author(s):  
William C. McColgin ◽  
J. P. Lavine ◽  
C. V. Stancampiano
Keyword(s):  
Cross Sections ◽  
Dark Current ◽  
Deep Level ◽  
Energy Levels ◽  
Image Sensors ◽  
Current Generation ◽  
Charge Coupled Device ◽  
Iron Nickel ◽  
Relationship Of ◽  
Ccd Image

AbstractWe have investigated the role of heavy metals in causing visible pixel defects in Charge Coupled Device (CCD) image sensors. Using a technique we call dark current spectroscopy, we can probe for deep-level traps in the active areas of completed image sensors with a sensitivity of 1 × 109 traps/cm3 or better. Analysis of histograms of dark current images from these sensors shows that the presence of traps causes quantization in the dark current. Different metal traps have characteristic dark current generation rates that can identify the contaminant trap. By examining the temperature dependence of the dark current generation, we have calculated the energy levels and generation cross sections for gold, iron, nickel, and cobalt. Our results show the relationship of these traps to the “white spot” defects reported for image sensors.

Radiation-Induced Deep-Level Traps in CCD Image Sensors

2007 ◽  
Vol 994 ◽  
Author(s):  
Cristian Tivarus ◽  
William C. McColgin
Keyword(s):  
Dark Current ◽  
Deep Level ◽  
Image Sensors ◽  
Charge Coupled Devices ◽  
Radiation Induced ◽  
Ccd Image ◽  
Silicon Defects

AbstractDark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.

High Speed Document Scanner Using Charge Coupled Device (CCD) Image Sensors

1983 ◽  
Author(s):  
Masahiro Mori ◽  
Isao Kondo ◽  
Masakatsu Horie
Keyword(s):  
High Speed ◽  
Image Sensors ◽  
Charge Coupled Device ◽  
Ccd Image

Dark Current Spectroscopy of Irradiated CCD Image Sensors

2008 ◽  
Vol 55 (3) ◽  
pp. 1719-1724 ◽  
Author(s):  
C. Tivarus ◽  
W. C. McColgin
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Ccd Image

Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

1992 ◽  
Vol 262 ◽  
Author(s):  
Biay-Cheng Hseih ◽  
S. Kosman ◽  
Y.C. Lo ◽  
K. Jayakar ◽  
M. Mehra ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Image Sensor ◽  
Image Sensors ◽  
Gate Electrode ◽  
Electrical And Optical Properties ◽  
Charge Coupled Device ◽  
Device Stability ◽  
Ccd Image Sensor ◽  
Ccd Image ◽  
Ito Films

ABSTRACTThe electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.

Silicon Wafer Defect Self-Characterization with CCD Image Sensors

2005 ◽  
Vol 864 ◽  
Author(s):  
William C. McColgin ◽  
Alexa M. Perryy ◽  
Dean J. Seidler ◽  
James P. Lavine
Keyword(s):  
Image Quality ◽  
Silicon Wafer ◽  
Dark Current ◽  
Image Sensors ◽  
High Image Quality ◽  
Ccd Image ◽  
Silicon Defects ◽  
Very High

AbstractToday's CCD image sensors can provide very high image quality. However, used as a tool, they can also provide a sensitive window into defects in silicon, either intrinsic to the starting wafers or introduced during fabrication. In this paper, we examine some cases of known silicon defects and show how they can appear in, and be studied by, CCD imagers. As examples, we discuss epi-layer defects, slip defects, and dark-current rings.

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