Device Degradation on a Full-Frame CCD Image Sensor with a Transparent Gate Electrode

1992 ◽  
Vol 262 ◽  
Author(s):  
Biay-Cheng Hseih ◽  
S. Kosman ◽  
Y.C. Lo ◽  
K. Jayakar ◽  
M. Mehra ◽  
...  

ABSTRACTThe electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.

1991 ◽  
Author(s):  
Eric G. Stevens ◽  
Stephen L. Kosman ◽  
John C. Cassidy ◽  
Winchyi Chang ◽  
Wesley A. Miller

Author(s):  
S.L. Kosman ◽  
E.G. Stevens ◽  
J.C. Cassidy ◽  
W.C. Chang ◽  
P. Roselle ◽  
...  

1981 ◽  
Author(s):  
Morley M. Blouke ◽  
James R. Janesick ◽  
Joseph E. Hall ◽  
Marvin W. Cowens

1988 ◽  
Vol 47 (2) ◽  
pp. 169-173 ◽  
Author(s):  
Jun-Ichi Matsushima ◽  
Masahiko Kumagai ◽  
Tohru Ifukube ◽  
Chihiro Harada

Author(s):  
Maksim E. Cherniak ◽  
Roman K. Mozhaev ◽  
Alexander A. Pechenkin ◽  
Dmitry V. Boychenko ◽  
Alexander Y. Nikiforov

2014 ◽  
Vol 4 (3) ◽  
pp. 274-280 ◽  
Author(s):  
Ying Chen ◽  
Wanpeng Xu ◽  
Rongsheng Zhao ◽  
Xiangning Chen

Author(s):  
M. Sasaki ◽  
Y. Koya ◽  
H. Yamashita ◽  
S. Ohsawa ◽  
R. Miyagawa ◽  
...  

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