scholarly journals Erratum to “Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors”

2017 ◽  
Vol 2017 ◽  
pp. 1-1
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Mos Capacitors ◽  
Gate Electrodes

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

Physical and electrical characterization of polysilicon vs. TiN gate electrodes for HfO2 transistors

2004 ◽  
Vol 7 (4-6) ◽  
pp. 259-263 ◽  
Author(s):  
Patrick S. Lysaght ◽  
Jeff J. Peterson ◽  
Brendan Foran ◽  
Chadwin D. Young ◽  
Gennadi Bersuker ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Electrodes

Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

2012 ◽  
Author(s):  
Anindita Das ◽  
Sanatan Chattopadhyay ◽  
Goutam K. Dalapati ◽  
Dongzhi Chi ◽  
M. K. Kumar
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Mos Capacitors

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

2011 ◽  
Vol 276 ◽  
pp. 87-93
Author(s):  
Y.Y. Gomeniuk ◽  
Y.V. Gomeniuk ◽  
A. Nazarov ◽  
P.K. Hurley ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Interface State ◽  
Channel Length ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Threshold Voltages

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

Electrical Characterization of Some Native Insulators on Germanium

1986 ◽  
Vol 76 ◽  
Author(s):  
O. J. Gregory ◽  
E. E. Crisman ◽  
Lisa Pruitt ◽  
D. J. Hymes ◽  
James J. Rosenberg
Keyword(s):  
Compositional Data ◽  
Electrical Characterization ◽  
Interface State ◽  
Chemical Oxidation ◽  
Mos Capacitors ◽  
Chemical Technique ◽  
Ir Transmission ◽  
Wet Chemical ◽  
State Densities

ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Electrical characterization of SiC MOS capacitors: A critical review

2020 ◽  
Vol 112 ◽  
pp. 113790
Author(s):  
Peyush Pande ◽  
Daniel Haasmann ◽  
Jisheng Han ◽  
Hamid Amini Moghadam ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Critical Review ◽  
Electrical Characterization ◽  
Mos Capacitors

scholarly journals Electrical Characterization of Positively Charged SiO Coatings for MOS Solar Cells

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
William Tsuyoshi Shiga ◽  
Stefanie Pereira Regis ◽  
Gabriel Oliveira Louzada ◽  
Marcos Norio Watanabe ◽  
Fábio Izumi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Relative Permittivity ◽  
Electrical Characterization ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Effective Charges ◽  
Positively Charged

This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p <100> substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P and Al/SiO/SiO2/Si-P structures were manufactured. It was observed the presence of negative charges in the structure with SiO/SiO2 with density of effective charges Qf ≈ -1x1012 cm-2 and relative permittivity of the die-lectric εr = 2.9. After sintering in ultrapure Ar and N2+H2(10%) the relative permittivity changed to εr = 4.52 and the layers stayed positively charged (Qf = (0.5-1.6)x1012 cm-2), which is adequate for positively charged anti-reflective (AR) coatings of MOS solar cells.

Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces

2013 ◽  
Vol 740-742 ◽  
pp. 719-722 ◽  
Author(s):  
Lukas K. Swanson ◽  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte
Keyword(s):  
Nitrous Oxide ◽  
Electrical Characterization ◽  
Mos Capacitors ◽  
Flat Interface ◽  
Transmission Electron ◽  
Nanoscale Characterization ◽  
Atomically Flat ◽  
Density Of Interface States ◽  
Insight Into

This work reports on the morphological, structural and electrical effects of a nitrous oxide (N2O) ambient post-oxidation annealing (POA) of the SiO2/4H-SiC interface. In particular, a conventional electrical characterization of MOS capacitors showed that nitrous oxide POA reduces the presence of both fixed oxide charge and the density of interface states. A local atomically flat interface was observed by transmission electron microscopy with only a moderate step bunching observed at a macroscopic scale. A novel nanoscale characterization approach via scanning spreading resistance microscopy resolved local electrical changes induced at the SiC surface exposed to N2O POA. This result subsequently revealed additional insight into the mechanism for the improved device performance subjected to N2O POA treatment.

Sign in / Sign up

Export Citation Format

Share Document