Reliability design of CMOS image sensor for space applications

2013 ◽  
Author(s):  
Ning Xie ◽  
Shijun Chen ◽  
Yongping Chen
2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1505 ◽  
Author(s):  
Woo-Tae Kim ◽  
Cheonwi Park ◽  
Hyunkeun Lee ◽  
Ilseop Lee ◽  
Byung-Geun Lee

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch.


2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.


Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


2014 ◽  
Vol 35 (3) ◽  
pp. 035005 ◽  
Author(s):  
Kaiming Nie ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Zhaorui Jiang

Sign in / Sign up

Export Citation Format

Share Document