Image reversal trilayer process using standard positive photoresist

Author(s):  
David J. Abdallah ◽  
John Sagan ◽  
Kazunori Kurosawa ◽  
Jin Li ◽  
Yusuke Takano ◽  
...  
1989 ◽  
Vol 28 (Part 1, No. 10) ◽  
pp. 2099-2103 ◽  
Author(s):  
Akinobu Tanaka ◽  
Hiroshi Ban ◽  
Yoshio Kawai

1985 ◽  
Vol 32 (9) ◽  
pp. 1654-1661 ◽  
Author(s):  
H. Klose ◽  
R. Sigush ◽  
W. Arden

2011 ◽  
Vol 411 ◽  
pp. 474-477 ◽  
Author(s):  
Shuai Bao ◽  
Ai Hua Gao ◽  
Huan Liu ◽  
Wei Guo Liu

This paper describes a simple and effective lift-off method that relies upon a single layer of positive photoresist and lithography technology. We have succeeded in patterning narrow lines in a photoresist film by image reversal process. Image reversal with AZ 5214-E resist is characterized by contact lithography. A process of patterning different line widths was developed based on image reversal technology, using AZ5214-E, followed by pre-bake, exposure, reversal bake, flood exposure and development. We could obtain very neat patterns with 2-5μm dimensions and their relative features have been supported by scanning electron microscope (SEM) pictures. The application of the proposed process is suitable for the electrode fabrication in MEMS SAW devices.


1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 7041-7047 ◽  
Author(s):  
Toshio Yada ◽  
Taro Maejima ◽  
Masaru Aoki

2005 ◽  
Author(s):  
Changqing Xie ◽  
Dapeng Chen ◽  
Jiebing Niu ◽  
Ming Liu ◽  
Tianchun Ye ◽  
...  
Keyword(s):  
X Ray ◽  

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