Formation mechanism of 193nm immersion defects and defect reduction strategies

2008 ◽  
Author(s):  
Yayi Wei ◽  
Stefan Brandl ◽  
Frank Goodwin
Keyword(s):  
Formation Mechanism ◽  
Defect Reduction ◽  
Reduction Strategies

Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects

2007 ◽  
Author(s):  
Lin-Hung Shiu ◽  
Fu-Jye Liang ◽  
Hsing Chang ◽  
Chun-Kuang Chen ◽  
Li-Jui Chen ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Defect Reduction

Defect reduction strategies for the manufacture of contoured laminates using vacuum BAG-only prepregs

2015 ◽  
Vol 38 (9) ◽  
pp. 2016-2025 ◽  
Author(s):  
Yijia Ma ◽  
Timotei Centea ◽  
Steven R. Nutt
Keyword(s):  
Defect Reduction ◽  
Reduction Strategies

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process

2009 ◽  
Author(s):  
Hiroshi Arima ◽  
Yuichi Yoshida ◽  
Kosuke Yoshihara ◽  
Tsuyoshi Shibata ◽  
Yuki Kushida ◽  
...  
Keyword(s):  
Formation Mechanism ◽  
Defect Formation ◽  
Residue Type ◽  
Defect Reduction ◽  
Type Defect

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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