High-field-induced hot-carrier temperature, bandgap narrowing, and carrier multiplication in bulk semiconductors

1992 ◽  
Author(s):  
Vijay K. Arora ◽  
Hiroyuki Sakaki
Keyword(s):  
High Field ◽  
Hot Carrier ◽  
Bandgap Narrowing ◽  
Carrier Temperature ◽  
Carrier Multiplication ◽  
Bulk Semiconductors

THE HOT CARRIER TEMPERATURE IN THE ANALYSIS OF THE FREE TO ACCEPTOR PHOTOLUMINESCENCE TRANSITION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 696-699 ◽  
Author(s):  
G. Fonthal ◽  
M. de los Rios ◽  
J. Quintero ◽  
N. Piraquive ◽  
H. Ariza-Calderón
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Density Of States ◽  
Impurity Concentration ◽  
Lattice Temperature ◽  
Band Tail ◽  
Hot Carrier ◽  
Additional Information ◽  
Carrier Temperature ◽  
Shape Equation

We analyzed the free to acceptor (e-A) photoluminescence transition on a GaAs:Ge sample using the hot carrier temperature and the Kane's DOS. This latter temperature was calculated by the spectra largest energy tail. While the lattice temperature was put in the e-A Eagles' shape equation, the fitting was poor but if the modified line was put into the equation, the fitting was better. So, the ionization impurity energy, the band gap, the Fermi level and the band tail can be measured with a better precision than the measurements traditionally made with this method, Additional information about phonons participant can be obtained. In conclusion, the hot carrier temperature and the density of states due to the impurity concentration should be used in the e-A transition photoluminescence analysis.

scholarly journals Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Young Keun Lee ◽  
Hongkyw Choi ◽  
Hyunsoo Lee ◽  
Changhwan Lee ◽  
Jin Sik Choi ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Carrier Multiplication

THE HOT CARRIER TEMPERATURE AND THE IMPURITY BAND IN KANE'S THEORY FOR HEAVILY DOPED SEMICONDUCTOR PHOTOLUMINESCENCE ANALYSIS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 692-695
Author(s):  
G. FONTHAL ◽  
L. E. TOBÓN ◽  
J. QUINTERO ◽  
N. PIRAQUIVE ◽  
H. ARIZA-CALDERÓN
Keyword(s):  
Urbach Energy ◽  
Impurity Band ◽  
High Energy ◽  
Hot Carrier ◽  
New Information ◽  
Carrier Temperature ◽  
Heavily Doped ◽  
Experimental Values ◽  
Fitting Parameters ◽  
Topological Disorder

We analyzed the photoluminescence (PL) spectra on heavily doped GaAs:Sn samples by Kane's theory including a Lorentzian, a Gaussian and the hot carrier temperature. The band gap, the Fermi level, and the Urbach tail were the fitting parameters. Good results were obtained when the theoretical and experimental values were compared for the three parameters. The Urbach energy magnitude and the topological disorder parameter increased when the impurity concentration augment. The average phononic participation was very close with the tabulated values. New information about a shoulder in the high energy side was obtained, too.

scholarly journals Protecting hot carriers by tuning hybrid perovskite structures with alkali cations

2020 ◽  
Vol 6 (43) ◽  
pp. eabb1336 ◽  
Author(s):  
Ti Wang ◽  
Linrui Jin ◽  
Juanita Hidalgo ◽  
Weibin Chu ◽  
Jordan M. Snaider ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Successful Implementation ◽  
Hot Carriers ◽  
Alkali Cations ◽  
Hot Carrier ◽  
Hybrid Perovskite ◽  
Carrier Temperature ◽  
High Carrier ◽  
Halide Perovskites ◽  
Effective Carrier

Successful implementation of hot carrier solar cells requires preserving high carrier temperature as carriers migrate through the active layer. Here, we demonstrated that addition of alkali cations in hybrid organic-inorganic lead halide perovskites led to substantially elevated carrier temperature, reduced threshold for phonon bottleneck, and enhanced hot carrier transport. The synergetic effects from the Rb, Cs, and K cations result in ~900 K increase in the effective carrier temperature at a carrier density around 1018 cm−3 with an excitation 1.45 eV above the bandgap. In the doped thin films, the protected hot carriers migrate 100 s of nanometers longer than the undoped sample as imaged by ultrafast microscopy. We attributed these improvements to the relaxation of lattice strain and passivation of halide vacancies by alkali cations based on x-ray structural characterizations and first principles calculations.

Reliability Study of Plasma Etching Damage in ULSI Process

1994 ◽  
Vol 338 ◽  
Author(s):  
Xiao-Yu Li ◽  
Jen-Tai Hsu ◽  
Paul Aum ◽  
Vivek Bissessur ◽  
David Chan ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Field ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Plasma Process ◽  
Reliability Study ◽  
Hot Carrier ◽  
Mos Devices ◽  
Induced Stress ◽  
Process Damage

ABSTRACTPlasma etching can cause damage in gate oxide during ULSI processing. The damage in the oxide is believed to arise through a high field induced stress current. However, there is another type of damage which is due to ion and photon bombardment on the edge of poly-Si gate during the plasma etching. These two damage mechanisms impose different reliability problems. One is hot-carrier(HC) stress and the other is Fowler-Nordheim(F-N) stress. MOS devices with special test structures to assess plasma process damage were fabricated using 0.35 μm CMOS technology. The devices with different poly gate antennas and etching through different poly-Si gate etching conditions were studied using SEM and various electrical techniques. It was found that oxide charging damaged device is more susceptible to F-N type of stress while ion and photon bombardment damaged device is more susceptible to HC type of stress.

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