Wave Instabilities in Bulk Semiconductors with Field‐Dependent Drift Velocity and Carrier Temperature

Akio Sasaki

doi:10.1063/1.1659512

Wave Instabilities in Bulk Semiconductors with Field‐Dependent Drift Velocity and Carrier Temperature

Journal of Applied Physics ◽

10.1063/1.1659512 ◽

1970 ◽

Vol 41 (9) ◽

pp. 3813-3818 ◽

Cited By ~ 4

Author(s):

Akio Sasaki

Keyword(s):

Drift Velocity ◽

Carrier Temperature ◽

Bulk Semiconductors ◽

Field Dependent ◽

Wave Instabilities

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Field‐dependent grain boundary barriers as a cause of carrier drift velocity saturation in organic solids

Journal of Applied Physics ◽

10.1063/1.335537 ◽

1985 ◽

Vol 58 (11) ◽

pp. 4440-4441 ◽

Cited By ~ 3

Author(s):

A. Szymański

Keyword(s):

Grain Boundary ◽

Drift Velocity ◽

Organic Solids ◽

Velocity Saturation ◽

Field Dependent

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High-field-induced hot-carrier temperature, bandgap narrowing, and carrier multiplication in bulk semiconductors

10.1117/12.56977 ◽

1992 ◽

Cited By ~ 2

Author(s):

Vijay K. Arora ◽

Hiroyuki Sakaki

Keyword(s):

High Field ◽

Hot Carrier ◽

Bandgap Narrowing ◽

Carrier Temperature ◽

Carrier Multiplication ◽

Bulk Semiconductors

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Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity

Electronics Letters ◽

10.1049/el:19690191 ◽

1969 ◽

Vol 5 (11) ◽

pp. 248-249 ◽

Cited By ~ 1

Author(s):

P. Gueret

Keyword(s):

Diffusion Coefficient ◽

Space Charge ◽

Drift Velocity ◽

Wave Instability ◽

Field Dependent ◽

Charge Wave ◽

Space Charge Wave

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Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models

Materials Science and Engineering B ◽

10.1016/j.mseb.2009.01.027 ◽

2009 ◽

Vol 165 (1-2) ◽

pp. 47-49 ◽

Cited By ~ 3

Author(s):

Gesualdo Donnarumma ◽

Janusz Woźny ◽

Zbigniew Lisik

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Drift Velocity ◽

Accurate Calculation ◽

Hydrodynamic Models ◽

Drift Diffusion ◽

Bulk Semiconductors

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Unified quantum approach for the electric field-dependent drift velocity and the diffusion coefficient

Physics Letters A ◽

10.1016/j.physleta.2003.08.051 ◽

2003 ◽

Vol 317 (3-4) ◽

pp. 315-323 ◽

Cited By ~ 3

Author(s):

P. Kleinert ◽

V.V. Bryksin

Keyword(s):

Diffusion Coefficient ◽

Electric Field ◽

Drift Velocity ◽

Field Dependent ◽

Quantum Approach

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ELECTRON DRIFT VELOCITY OF THE TWO-DIMENSIONAL ELECTRON GAS IN COMPOUND SEMICONDUCTORS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156400000131 ◽

2000 ◽

Vol 10 (01) ◽

pp. 103-110 ◽

Cited By ~ 4

Author(s):

ALEXANDER DMITRIEV ◽

VALENTIN KACHOROVSKI ◽

MICHAEL S. SHUR ◽

MICHAEL STROSCIO

Keyword(s):

Quantum Wells ◽

Drift Velocity ◽

Electron Gas ◽

Compound Semiconductors ◽

Electron Drift Velocity ◽

Electron Drift ◽

Two Dimensional ◽

Dimensional Electron ◽

Bulk Semiconductors ◽

Dimensional Electron Gas

We show that, as a consequence of an enhanced electron runaway for two-dimensional (2D) electrons, the peak electron drift velocity and peak electric field in compound semiconductors are smaller than in bulk semiconductors. This prediction agrees with the results of Monte-Carlo simulations for the 2D electrons at a GaAs/GaAlAs heterointerface and with the measured peak velocities in InGaAs/InAlAs quantum wells.

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