scholarly journals Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Young Keun Lee ◽  
Hongkyw Choi ◽  
Hyunsoo Lee ◽  
Changhwan Lee ◽  
Jin Sik Choi ◽  
...  
Keyword(s):  
Hot Carrier ◽  
Carrier Multiplication

scholarly journals Fundamental Issues in Manufacturing Photovoltaic Modules Beyond the Current Generation of Materials

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
G. F. Alapatt ◽  
R. Singh ◽  
K. F. Poole
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Self Assembly ◽  
New Techniques ◽  
Current Generation ◽  
Intermediate Band ◽  
Hot Carrier ◽  
Carrier Multiplication ◽  
Processing Techniques ◽  
Carrier Extraction

Many methods to improve the solar cell’s efficiency beyond current generation of bulk and thin film of photovoltaic (PV) devices have been reported during the last five decades. Concepts such as multiple exciton generations (MEG), carrier multiplication (CM), hot carrier extraction, and intermediate band solar cells have fundamental flaws, and there is no experimental evidence of fabricating practical higher efficiency solar cells based on the proposed concepts. To take advantages of quantum features of nanostructures for higher performance PV devices, self-assembly-based bottom-up processing techniques are not suitable for manufacturing due to inherent problems of variability, defects, reliability, and yield. For processing nanostructures, new techniques need to be invented with the features of critical dimensional control, structural homogeneity, and lower cost of ownership as compared to the processing tools used in current generations of bulk and thin-film solar cells.

Carrier Multiplication and Hot-Carrier Cooling Dynamics in Quantum-Confined CsPbI3 Perovskite Nanocrystals

2020 ◽  
Vol 11 (5) ◽  
pp. 1921-1926 ◽  
Author(s):  
Muyu Cong ◽  
Bin Yang ◽  
Junsheng Chen ◽  
Feng Hong ◽  
Songqiu Yang ◽  
...  
Keyword(s):  
Perovskite Nanocrystals ◽  
Hot Carrier ◽  
Carrier Multiplication ◽  
Quantum Confined

scholarly journals Hot carrier multiplication in plasmonic photocatalysis

2021 ◽  
Vol 118 (20) ◽  
pp. e2022109118
Author(s):  
Linan Zhou ◽  
Minhan Lou ◽  
Junwei Lucas Bao ◽  
Chao Zhang ◽  
Jun G. Liu ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Activation Mechanism ◽  
Metal Nanostructures ◽  
Hot Carriers ◽  
Hot Carrier ◽  
Carrier Mechanism ◽  
Carrier Multiplication ◽  
Mechanical Study ◽  
Vibrational Excitations ◽  
Quantum Mechanical Study

Light-induced hot carriers derived from the surface plasmons of metal nanostructures have been shown to be highly promising agents for photocatalysis. While both nonthermal and thermalized hot carriers can potentially contribute to this process, their specific role in any given chemical reaction has generally not been identified. Here, we report the observation that the H2–D2 exchange reaction photocatalyzed by Cu nanoparticles is driven primarily by thermalized hot carriers. The external quantum yield shows an intriguing S-shaped intensity dependence and exceeds 100% for high light intensities, suggesting that hot carrier multiplication plays a role. A simplified model for the quantum yield of thermalized hot carriers reproduces the observed kinetic features of the reaction, validating our hypothesis of a thermalized hot carrier mechanism. A quantum mechanical study reveals that vibrational excitations of the surface Cu–H bond is the likely activation mechanism, further supporting the effectiveness of low-energy thermalized hot carriers in photocatalyzing this reaction.

PERIODIC OSCILLATIONS AND TURBULENCE OF HOT-CARRIER PLASMA AT 4.2 K IN n-GaAs

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-51-C7-56
Author(s):  
K. Aoki ◽  
T. Kobayashi ◽  
K. Yamamoto
Keyword(s):  
Periodic Oscillations ◽  
Hot Carrier

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation
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