Bias-induced long-term transient in a-Si:H thin film transistors

2004 ◽  
Author(s):  
Shah M. Jahinuzzaman ◽  
Peyman Servati ◽  
Arokia Nathan
RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.


2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 52913-52919 ◽  
Author(s):  
Yeo-Myeong Kim ◽  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Ji-Young Oh ◽  
Sung-Min Yoon

In this work, we proposed new type of synapse device with thin-film transistor (TFT) configuration using an In–Ga–Zn–O (IGZO) as active channel and a poly(4-vinylphenol)–sodium β-alumina (PVP–SBA) as gate insulator for emulating brain-like functions.


2009 ◽  
Vol 42 (21) ◽  
pp. 8251-8259 ◽  
Author(s):  
Horng-Long Cheng ◽  
Jr-Wei Lin ◽  
Ming-Feng Jang ◽  
Fu-Chiao Wu ◽  
Wei-Yang Chou ◽  
...  

2005 ◽  
Vol 252 (5) ◽  
pp. 1332-1338 ◽  
Author(s):  
Woo Jin Kim ◽  
Won Hoe Koo ◽  
Sung Jin Jo ◽  
Chang Su Kim ◽  
Hong Koo Baik ◽  
...  

2014 ◽  
Vol 35 (12) ◽  
pp. 1260-1262 ◽  
Author(s):  
Young-Joon Han ◽  
Yong-Jin Choi ◽  
In-Tak Cho ◽  
Sung Hun Jin ◽  
Jong-Ho Lee ◽  
...  

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