Long-term stabilization of sprayed zinc oxide thin film transistors by hexafluoropropylene oxide self assembled monolayers

2013 ◽  
Vol 114 (9) ◽  
pp. 094512 ◽  
Author(s):  
Marlis Ortel ◽  
Nataliya Kalinovich ◽  
Gerd-Volker Röschenthaler ◽  
Veit Wagner
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Self Assembled Monolayers ◽  
Zinc Oxide Thin Film ◽  
Assembled Monolayers ◽  
Hexafluoropropylene Oxide ◽  
Self Assembled

scholarly journals Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 481
Author(s):  
Juhyung Seo ◽  
Hocheon Yoo
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Indium Gallium Zinc Oxide ◽  
Self Assembled Monolayer ◽  
Assembled Monolayers ◽  
Indium Gallium ◽  
Self Assembled

Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide semiconductors in electronic products, an effective doping method that can control the electrical characteristics of oxide TFTs is required. Here, we comprehensively investigate the effect of silane-based self-assembled monolayer (SAM) doping on IGZO TFTs. Instead of a complex doping process, the electrical performance can be enhanced by anchoring silane-based SAMs on the IGZO surface. Furthermore, differences in the doping effect based on the structure of SAMs were analyzed; the analysis offers a systematic guideline for effective electrical characteristic control in IGZO TFTs.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Characteristics of Indium Tin Zinc Oxide Thin Film Transistors with Plastic Substrates

2018 ◽  
Vol 28 (4) ◽  
pp. 247-253
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong-Heon Kim ◽  
Hyun-Suk Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Plastic Substrates

Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Inverters Using Only N-Type Indium Gallium Zinc Oxide Thin Film Transistors for Flat Panel Display Applications

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Flat Panel Display ◽  
Zinc Oxide Thin Film ◽  
Flat Panel ◽  
Indium Gallium
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