Long-Term Operations of Polymeric Thin-Film Transistors: Electric-Field-Induced Intrachain Order and Charge Transport Enhancements of Conjugated Poly(3-hexylthiophene)

2009 ◽  
Vol 42 (21) ◽  
pp. 8251-8259 ◽  
Author(s):  
Horng-Long Cheng ◽  
Jr-Wei Lin ◽  
Ming-Feng Jang ◽  
Fu-Chiao Wu ◽  
Wei-Yang Chou ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Charge Transport ◽  
Thin Film Transistors ◽  
Polymeric Thin Film

Electric-field-dependent charge transport in organic thin-film transistors

2007 ◽  
Vol 101 (5) ◽  
pp. 054515 ◽  
Author(s):  
Liang Wang ◽  
Daniel Fine ◽  
Debarshi Basu ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Charge Transport ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Dependent

Effect of Source–Drain Electric Field on Charge Transport Mechanism in Polymer‐Based Thin‐Film Transistors

2021 ◽  
pp. 2000753
Author(s):  
Swarup Biswas ◽  
Kyeong-Ho Seo ◽  
Yongju Lee ◽  
Yun-Hi Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Charge Transport ◽  
Thin Film Transistors ◽  
Transport Mechanism ◽  
Charge Transport Mechanism

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Perylene Diimide ◽  
Term Stability ◽  
Long Term Stability ◽  
The Impact

Bias-induced long-term transient in a-Si:H thin film transistors

2004 ◽  
Author(s):  
Shah M. Jahinuzzaman ◽  
Peyman Servati ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors

High Performance Amorphous Polymeric Thin-Film Transistors Based on Poly[(1,2-bis-(2′-thienyl)vinyl-5′,5′′-diyl)-alt-(9,9-dioctylfluorene-2,7-diyl] Semiconductors

2008 ◽  
Vol 20 (10) ◽  
pp. 3450-3456 ◽  
Author(s):  
Dae Sung Chung ◽  
Sung Joong Lee ◽  
Jun Woo Park ◽  
Dan Bi Choi ◽  
Dong Hoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Polymeric Thin Film
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