Increase the field-effect mobility of regioregular poly(3-hexylthiophene) by introducing fixed acceptor molecules

2004 ◽  
Author(s):  
Silvia Janietz ◽  
Dessislava Sainova ◽  
Armin Wedel
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly ◽  
Acceptor Molecules

Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

2006 ◽  
Vol 100 (11) ◽  
pp. 114503 ◽  
Author(s):  
Shinuk Cho ◽  
Kwanghee Lee ◽  
Jonathan Yuen ◽  
Guangming Wang ◽  
Daniel Moses ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs

2001 ◽  
Vol 708 ◽  
Author(s):  
G. C. R. Lloyd ◽  
N. Sedghi ◽  
M. Raja ◽  
R. Di Lucrezia ◽  
S. Higgins ◽  
...  
Keyword(s):  
Field Effect ◽  
Thin Film Transistor ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Field Effect Mobility ◽  
Leakage Currents ◽  
Doping Density ◽  
Regioregular Poly ◽  
Flow Through

ABSTRACTMeasurements and theory are presented examining the relationship between mobility and doping in regioregular poly(3-hexylthiophene) (P3HT). Mobility is found to increase super-linearly with doping and is comparable to models reported for other conjugated polymers. Schottky measurements have been used to calculate the doping density and bulk mobility of regioregular P3HT. Aluminium Schottky contacts showed signs of native oxide disrupting current flow through the device. This effect was observed to degrade further with the introduction of dopant into the polymer. Titanium devices show a general shift of the Schottky characteristic to higher current levels with increased dopant. Field effect mobility of P3HT films was also calculated using thin-film transistor (TFT) structures. The field effect mobility values were observed to be more than two orders of magnitude higher than the bulk mobility value. The addition of dopant also increased gate leakage currents in TFT devices. The increased conductivity in doped polymer can increase off currents in the device; this is avoided by using Schottky contacts as the source and drain. Preliminary results on Schottky contact TFTs are also presented as well as a description of the operation of such a device.

Tunable Crystallinity in Regioregular Poly(3-Hexylthiophene) Thin Films and Its Impact on Field Effect Mobility

2011 ◽  
Vol 21 (14) ◽  
pp. 2652-2659 ◽  
Author(s):  
Avishek R. Aiyar ◽  
Jung-Il Hong ◽  
Rakesh Nambiar ◽  
David M. Collard ◽  
Elsa Reichmanis
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Dependence of Regioregular Poly(3-hexylthiophene) Film Morphology and Field-Effect Mobility on Molecular Weight

2005 ◽  
Vol 38 (8) ◽  
pp. 3312-3319 ◽  
Author(s):  
R. Joseph Kline ◽  
Michael D. McGehee ◽  
Ekaterina N. Kadnikova ◽  
Jinsong Liu ◽  
Jean M. J. Fréchet ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
Film Morphology ◽  
Field Effect Mobility ◽  
Regioregular Poly

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

2008 ◽  
Vol 92 (26) ◽  
pp. 263303 ◽  
Author(s):  
K. A. Singh ◽  
G. Sauvé ◽  
R. Zhang ◽  
T. Kowalewski ◽  
R. D. McCullough ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Nanostructure Dependence of Field-Effect Mobility in Regioregular Poly(3-hexylthiophene) Thin Film Field Effect Transistors

2006 ◽  
Vol 128 (11) ◽  
pp. 3480-3481 ◽  
Author(s):  
Rui Zhang ◽  
Bo Li ◽  
Mihaela C. Iovu ◽  
Malika Jeffries-EL ◽  
Geneviève Sauvé ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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