Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

2006 ◽  
Vol 100 (11) ◽  
pp. 114503 ◽  
Author(s):  
Shinuk Cho ◽  
Kwanghee Lee ◽  
Jonathan Yuen ◽  
Guangming Wang ◽  
Daniel Moses ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Kobayashi ◽  
S. Nonomura ◽  
K. Abe ◽  
T. Gotoh ◽  
S. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Field Effect ◽  
Annealing Treatment ◽  
Drain Current ◽  
Localized States ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Nano Crystalline ◽  
Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs

2001 ◽  
Vol 708 ◽  
Author(s):  
G. C. R. Lloyd ◽  
N. Sedghi ◽  
M. Raja ◽  
R. Di Lucrezia ◽  
S. Higgins ◽  
...  
Keyword(s):  
Field Effect ◽  
Thin Film Transistor ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Field Effect Mobility ◽  
Leakage Currents ◽  
Doping Density ◽  
Regioregular Poly ◽  
Flow Through

ABSTRACTMeasurements and theory are presented examining the relationship between mobility and doping in regioregular poly(3-hexylthiophene) (P3HT). Mobility is found to increase super-linearly with doping and is comparable to models reported for other conjugated polymers. Schottky measurements have been used to calculate the doping density and bulk mobility of regioregular P3HT. Aluminium Schottky contacts showed signs of native oxide disrupting current flow through the device. This effect was observed to degrade further with the introduction of dopant into the polymer. Titanium devices show a general shift of the Schottky characteristic to higher current levels with increased dopant. Field effect mobility of P3HT films was also calculated using thin-film transistor (TFT) structures. The field effect mobility values were observed to be more than two orders of magnitude higher than the bulk mobility value. The addition of dopant also increased gate leakage currents in TFT devices. The increased conductivity in doped polymer can increase off currents in the device; this is avoided by using Schottky contacts as the source and drain. Preliminary results on Schottky contact TFTs are also presented as well as a description of the operation of such a device.

Tunable Crystallinity in Regioregular Poly(3-Hexylthiophene) Thin Films and Its Impact on Field Effect Mobility

2011 ◽  
Vol 21 (14) ◽  
pp. 2652-2659 ◽  
Author(s):  
Avishek R. Aiyar ◽  
Jung-Il Hong ◽  
Rakesh Nambiar ◽  
David M. Collard ◽  
Elsa Reichmanis
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Dependence of Regioregular Poly(3-hexylthiophene) Film Morphology and Field-Effect Mobility on Molecular Weight

2005 ◽  
Vol 38 (8) ◽  
pp. 3312-3319 ◽  
Author(s):  
R. Joseph Kline ◽  
Michael D. McGehee ◽  
Ekaterina N. Kadnikova ◽  
Jinsong Liu ◽  
Jean M. J. Fréchet ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
Film Morphology ◽  
Field Effect Mobility ◽  
Regioregular Poly

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

2008 ◽  
Vol 92 (26) ◽  
pp. 263303 ◽  
Author(s):  
K. A. Singh ◽  
G. Sauvé ◽  
R. Zhang ◽  
T. Kowalewski ◽  
R. D. McCullough ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly
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