Tunable Crystallinity in Regioregular Poly(3-Hexylthiophene) Thin Films and Its Impact on Field Effect Mobility

2011 ◽  
Vol 21 (14) ◽  
pp. 2652-2659 ◽  
Author(s):  
Avishek R. Aiyar ◽  
Jung-Il Hong ◽  
Rakesh Nambiar ◽  
David M. Collard ◽  
Elsa Reichmanis
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Kobayashi ◽  
S. Nonomura ◽  
K. Abe ◽  
T. Gotoh ◽  
S. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Field Effect ◽  
Annealing Treatment ◽  
Drain Current ◽  
Localized States ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Nano Crystalline ◽  
Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

The Effect of Morphology on Electron Field-Effect Mobility in Disordered C60 Thin Films

Nano Letters ◽  
2009 ◽  
Vol 9 (3) ◽  
pp. 1085-1090 ◽  
Author(s):  
Joe J. Kwiatkowski ◽  
Jarvist M. Frost ◽  
Jenny Nelson
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Electron Field

Hall mobility and field effect mobility studies on PbTe HWE thin films

1985 ◽  
Vol 22-23 ◽  
pp. 731-736 ◽  
Author(s):  
P.R. Vaya ◽  
J. Majhi ◽  
B.S.V. Gopalam ◽  
C. Dattatreyan
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Mobility Studies

Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2Ambient

2008 ◽  
Vol 1 ◽  
pp. 041801 ◽  
Author(s):  
Takamichi Yokoyama ◽  
Chang Bum Park ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Field Effect ◽  
Low Pressure ◽  
Size Increase ◽  
Field Effect Mobility

Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

2006 ◽  
Vol 100 (11) ◽  
pp. 114503 ◽  
Author(s):  
Shinuk Cho ◽  
Kwanghee Lee ◽  
Jonathan Yuen ◽  
Guangming Wang ◽  
Daniel Moses ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs

2001 ◽  
Vol 708 ◽  
Author(s):  
G. C. R. Lloyd ◽  
N. Sedghi ◽  
M. Raja ◽  
R. Di Lucrezia ◽  
S. Higgins ◽  
...  
Keyword(s):  
Field Effect ◽  
Thin Film Transistor ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Field Effect Mobility ◽  
Leakage Currents ◽  
Doping Density ◽  
Regioregular Poly ◽  
Flow Through

ABSTRACTMeasurements and theory are presented examining the relationship between mobility and doping in regioregular poly(3-hexylthiophene) (P3HT). Mobility is found to increase super-linearly with doping and is comparable to models reported for other conjugated polymers. Schottky measurements have been used to calculate the doping density and bulk mobility of regioregular P3HT. Aluminium Schottky contacts showed signs of native oxide disrupting current flow through the device. This effect was observed to degrade further with the introduction of dopant into the polymer. Titanium devices show a general shift of the Schottky characteristic to higher current levels with increased dopant. Field effect mobility of P3HT films was also calculated using thin-film transistor (TFT) structures. The field effect mobility values were observed to be more than two orders of magnitude higher than the bulk mobility value. The addition of dopant also increased gate leakage currents in TFT devices. The increased conductivity in doped polymer can increase off currents in the device; this is avoided by using Schottky contacts as the source and drain. Preliminary results on Schottky contact TFTs are also presented as well as a description of the operation of such a device.

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