Field-Effect Mobility of Charge Carriers in Blends of Regioregular Poly(3-alkylthiophene)s

2003 ◽  
Vol 107 (8) ◽  
pp. 1749-1754 ◽  
Author(s):  
Amit Babel ◽  
Samson A. Jenekhe
Keyword(s):  
Field Effect ◽  
Charge Carriers ◽  
Field Effect Mobility ◽  
Regioregular Poly ◽  
Mobility Of Charge Carriers

Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

2006 ◽  
Vol 100 (11) ◽  
pp. 114503 ◽  
Author(s):  
Shinuk Cho ◽  
Kwanghee Lee ◽  
Jonathan Yuen ◽  
Guangming Wang ◽  
Daniel Moses ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

Increasing the Carrier Mobility in P3HT by Doping for use in Schottky Barrier TFTs

2001 ◽  
Vol 708 ◽  
Author(s):  
G. C. R. Lloyd ◽  
N. Sedghi ◽  
M. Raja ◽  
R. Di Lucrezia ◽  
S. Higgins ◽  
...  
Keyword(s):  
Field Effect ◽  
Thin Film Transistor ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Native Oxide ◽  
Field Effect Mobility ◽  
Leakage Currents ◽  
Doping Density ◽  
Regioregular Poly ◽  
Flow Through

ABSTRACTMeasurements and theory are presented examining the relationship between mobility and doping in regioregular poly(3-hexylthiophene) (P3HT). Mobility is found to increase super-linearly with doping and is comparable to models reported for other conjugated polymers. Schottky measurements have been used to calculate the doping density and bulk mobility of regioregular P3HT. Aluminium Schottky contacts showed signs of native oxide disrupting current flow through the device. This effect was observed to degrade further with the introduction of dopant into the polymer. Titanium devices show a general shift of the Schottky characteristic to higher current levels with increased dopant. Field effect mobility of P3HT films was also calculated using thin-film transistor (TFT) structures. The field effect mobility values were observed to be more than two orders of magnitude higher than the bulk mobility value. The addition of dopant also increased gate leakage currents in TFT devices. The increased conductivity in doped polymer can increase off currents in the device; this is avoided by using Schottky contacts as the source and drain. Preliminary results on Schottky contact TFTs are also presented as well as a description of the operation of such a device.

Tunable Crystallinity in Regioregular Poly(3-Hexylthiophene) Thin Films and Its Impact on Field Effect Mobility

2011 ◽  
Vol 21 (14) ◽  
pp. 2652-2659 ◽  
Author(s):  
Avishek R. Aiyar ◽  
Jung-Il Hong ◽  
Rakesh Nambiar ◽  
David M. Collard ◽  
Elsa Reichmanis
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Dependence of Regioregular Poly(3-hexylthiophene) Film Morphology and Field-Effect Mobility on Molecular Weight

2005 ◽  
Vol 38 (8) ◽  
pp. 3312-3319 ◽  
Author(s):  
R. Joseph Kline ◽  
Michael D. McGehee ◽  
Ekaterina N. Kadnikova ◽  
Jinsong Liu ◽  
Jean M. J. Fréchet ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Field Effect ◽  
Film Morphology ◽  
Field Effect Mobility ◽  
Regioregular Poly

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

2008 ◽  
Vol 92 (26) ◽  
pp. 263303 ◽  
Author(s):  
K. A. Singh ◽  
G. Sauvé ◽  
R. Zhang ◽  
T. Kowalewski ◽  
R. D. McCullough ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Исследование подвижности носителей заряда в слоях нанокристаллов PBS методом полевого транзистора

2022 ◽  
Vol 56 (2) ◽  
pp. 236
Author(s):  
П.С. Парфенов ◽  
Н.В. Бухряков ◽  
Д.А. Онищук ◽  
А.А. Бабаев ◽  
А.В. Соколова ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Inert Atmosphere ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Tetrabutylammonium Iodide ◽  
Effect Transistor ◽  
The Difference ◽  
Current Flows

The field-effect transistor method is used to study the mobility of charge carriers in layers of lead sulfide nanocrystals with ligands of tetrabutylammonium iodide and 1,2-ethanedithiol used to create solar cells. The difference between the operating of a transistor in ambient air and in an inert atmosphere is demonstrated. It is shown that, in the ambient air, the processes of charging nanocrystals are activated when current flows, and the influence of the polarization of the interface of nanocrystals and the insulator on the measurement of the mobility is analyzed. Different reactions of the layers with ligands to light have been demonstrated, showing a significant oxidation of the surface of nanocrystals treated with 1,2-ethanedithiol.

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