Nanostructure Dependence of Field-Effect Mobility in Regioregular Poly(3-hexylthiophene) Thin Film Field Effect Transistors

2006 ◽  
Vol 128 (11) ◽  
pp. 3480-3481 ◽  
Author(s):  
Rui Zhang ◽  
Bo Li ◽  
Mihaela C. Iovu ◽  
Malika Jeffries-EL ◽  
Geneviève Sauvé ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Regioregular Poly

New Copolymers Based on Acenaphto[1,2-b]thieno[3,4-e]Pyrazine for Transistor and Solar Cell Applications

2009 ◽  
Vol 1197 ◽  
Author(s):  
Pierre-Luc T. Boudreault ◽  
Nobuyuki Miyaki ◽  
Rajib Mondal ◽  
Ming Lee Tang ◽  
Zhenan Bao ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thermal Treatment ◽  
Power Conversion Efficiency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Conversion ◽  
Photovoltaic Cells ◽  
Field Effect Mobility ◽  
Donor Acceptor

AbstractWe will show the synthesis of new donor-acceptor copolymers based on 2,7-carbazole or 2,7-dibenzosilole and acenaphtho[1,2-b]thieno[3,4-e]pyrazine. After the synthesis of these new copolymers, we have characterized the materials by UV-vis, DSC, and XRD to determine the degree of organization. Afterward, we have fabricated and investigated field-effect transistors and photovoltaic cells from these polymers. The optimization of the thin film by thermal treatment have led to a field-effect mobility of 0.04 cm2/(V.s) and power conversion efficiency of 0.44%.

Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

2008 ◽  
Vol 92 (26) ◽  
pp. 263303 ◽  
Author(s):  
K. A. Singh ◽  
G. Sauvé ◽  
R. Zhang ◽  
T. Kowalewski ◽  
R. D. McCullough ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase
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