Characterization of SU-8 as a photoresist for electron-beam lithography

2003 ◽  
Author(s):  
Arun K. Nallani ◽  
Sang Won Park ◽  
Jeong Bong Lee
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography

Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy

2000 ◽  
Vol 6 (2) ◽  
pp. 129-136 ◽  
Author(s):  
B. A. Sexton ◽  
R. J. Marnock
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Scanning Probe Microscopy ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Feedback Process ◽  
Probe Microscope ◽  
Etched Silicon ◽  
Micro Patterns

Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.

Submicron Ferroelectric Elements Fabricated by Direct Electron Beam Lithography

2002 ◽  
Vol 748 ◽  
Author(s):  
Dong-Joo Kim ◽  
Jin Seo Im ◽  
Carol Thompson ◽  
S. K. Streiffer ◽  
G. Wiederrecht ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Mode Switching ◽  
Direct Write ◽  
Ferroelectric Films ◽  
Contact Mode ◽  
Probe Microscope ◽  
Ferroelectric Memory

ABSTRACTTo realize Gigabit density ferroelectric memory devices, downscaling issues involving processing, materials, and fundamental ferroelectric behavior must be resolved. To address patterning and characterizing ferroelectric films at the nanoscale, we have prepared different lateral sizes of ferroelectric PZT capacitors down to 120 nm, using direct-write electron beam lithography. Characterization of the piezoelectric activity of the patterned elements was performed by means of piezoelectric-sensitive scanning probe microscope in the contact mode. Switching of single 120 nm cells was achieved.

Motif Parameters Based Characterization of Line Edge Roughness of a Nanoscale Grating Structure

2010 ◽  
Vol 437 ◽  
pp. 45-50
Author(s):  
Zhuang De Jiang ◽  
Feng Xia Zhao ◽  
Wei Xuan Jing ◽  
Philip D. Prewett ◽  
Kyle Jiang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Evaluation Method ◽  
Line Edge Roughness ◽  
Grating Structure ◽  
Nano Scale ◽  
Edge Roughness ◽  
Positive Resist

Motif parameters were introduced to characterize line edge roughness (LER) of a nanoscale grating structure. Firstly with electron beam lithography employed the expected nano-scale grating structure with linewidth of 16 nm was fabricated on positive resist. Then the line edge profiles of the structure were extracted and their LERs were characterized. The results showed that the evaluation method is rather simple, effective and recommendable.

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