Compact modeling of noise for RF CMOS circuit simulation

2003 ◽  
Author(s):  
Andries J. Scholten ◽  
Luuk F. Tiemeijer ◽  
Ronald van Langevelde ◽  
Ramon J. Havens ◽  
Adrie T. A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Compact Modeling ◽  
Rf Cmos ◽  
Cmos Circuit

Noise modeling for RF CMOS circuit simulation

2003 ◽  
Vol 50 (3) ◽  
pp. 618-632 ◽  
Author(s):  
A.J. Scholten ◽  
L.F. Tiemeijer ◽  
R. van Langevelde ◽  
R.J. Havens ◽  
A.T.A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Rf Cmos ◽  
Cmos Circuit ◽  
Noise Modeling

scholarly journals Compact MOS Modelling for RF CMOS Circuit Simulation

2001 ◽  
pp. 194-201 ◽  
Author(s):  
A. J. Scholten ◽  
R. van Langevelde ◽  
L. F. Tiemeijer ◽  
R. J. Havens ◽  
D. B. M. Klaassen
Keyword(s):  
Circuit Simulation ◽  
Rf Cmos ◽  
Cmos Circuit

scholarly journals Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

2021 ◽  
Vol 11 (11) ◽  
pp. 4838
Author(s):  
Je-Hyuk Kim ◽  
Youngjin Seo ◽  
Jun Tae Jang ◽  
Shinyoung Park ◽  
Dongyeon Kang ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Circuit Simulation ◽  
Flexible Substrate ◽  
Atomic Layer ◽  
Operating Conditions ◽  
Gate Insulator ◽  
Compact Modeling ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Stress ◽  
Bending Radius

Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.

scholarly journals Reconfigurable RF CMOS Circuit for Cognitive Radio

2008 ◽  
Vol E91-B (1) ◽  
pp. 10-13 ◽  
Author(s):  
K. MASU ◽  
K. OKADA
Keyword(s):  
Cognitive Radio ◽  
Rf Cmos ◽  
Cmos Circuit

scholarly journals AMS/RF-CMOS circuit design for wireless transceivers

Integration ◽  
2009 ◽  
Vol 42 (1) ◽  
pp. 1-2
Author(s):  
R. Castro-López ◽  
D. Rodríguez de Llera ◽  
M. Ismail ◽  
F.V. Fernández
Keyword(s):  
Circuit Design ◽  
Rf Cmos ◽  
Cmos Circuit ◽  
Wireless Transceivers

Compact modelling of noise for RF CMOS circuit design

2004 ◽  
Vol 151 (2) ◽  
pp. 167 ◽  
Author(s):  
A.J. Scholten ◽  
L.F. Tiemeijer ◽  
R. van Langevelde ◽  
R.J. Havens ◽  
A.T.A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Design ◽  
Rf Cmos ◽  
Cmos Circuit

RF CMOS RELIABILITY

2001 ◽  
Vol 11 (04) ◽  
pp. 1249-1295 ◽  
Author(s):  
SASAN NASEH ◽  
M. JAMAL DEEN
Keyword(s):  
Circuit Simulation ◽  
Low Noise ◽  
Rf Cmos ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Rf Cmos Circuits ◽  
Noise Amplifier ◽  
Hot Carrier Effects ◽  
Rf Performance ◽  
Nmos Transistors

In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.

DC/AC Compact Modeling of TFETs for Circuit Simulation of Logic Cells Based on an Analytical Physics-Based Framework

2017 ◽  
Author(s):  
Fabian Horst ◽  
Alexander Kloes ◽  
Atieh Farokhnejad ◽  
Michael Graef ◽  
Fabian Hosenfeld ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Compact Modeling ◽  
Logic Cells
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