Lower Power Design for UHF RF CMOS Circuits Based on the Power Consumption Acuity

Excessive energy consumption of UHF tag is the bottleneck of energy saving in its wide range of applications. To address this issue, a lower power design for UHF RF CMOS circuits based on power consumption acuity is proposed in this paper. Through in-depth analysis of the static and dynamic power generation principle of UHF RF circuits in the work, the power consumption acuity can be calculated by using the correlation of circuit power and input vector. Subsequently, under the guide of this acuity, the UHF RF CMOS circuits with better energy saving can be designed. Furthermore, according to the performance indicators of EPC CIG2 UHF RFID in UHF identification, the corresponding circuit is designed and implemented. The test results show that the design of UHF RF circuit based on the acuity of power consumption can reduce 35%–40% power consumption.

RF CMOS RELIABILITY

In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.