Noise modeling for RF CMOS circuit simulation

2003 ◽  
Vol 50 (3) ◽  
pp. 618-632 ◽  
Author(s):  
A.J. Scholten ◽  
L.F. Tiemeijer ◽  
R. van Langevelde ◽  
R.J. Havens ◽  
A.T.A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Rf Cmos ◽  
Cmos Circuit ◽  
Noise Modeling

scholarly journals Compact MOS Modelling for RF CMOS Circuit Simulation

2001 ◽  
pp. 194-201 ◽  
Author(s):  
A. J. Scholten ◽  
R. van Langevelde ◽  
L. F. Tiemeijer ◽  
R. J. Havens ◽  
D. B. M. Klaassen
Keyword(s):  
Circuit Simulation ◽  
Rf Cmos ◽  
Cmos Circuit

Compact modeling of noise for RF CMOS circuit simulation

2003 ◽  
Author(s):  
Andries J. Scholten ◽  
Luuk F. Tiemeijer ◽  
Ronald van Langevelde ◽  
Ramon J. Havens ◽  
Adrie T. A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Compact Modeling ◽  
Rf Cmos ◽  
Cmos Circuit

scholarly journals Reconfigurable RF CMOS Circuit for Cognitive Radio

2008 ◽  
Vol E91-B (1) ◽  
pp. 10-13 ◽  
Author(s):  
K. MASU ◽  
K. OKADA
Keyword(s):  
Cognitive Radio ◽  
Rf Cmos ◽  
Cmos Circuit

scholarly journals AMS/RF-CMOS circuit design for wireless transceivers

Integration ◽  
2009 ◽  
Vol 42 (1) ◽  
pp. 1-2
Author(s):  
R. Castro-López ◽  
D. Rodríguez de Llera ◽  
M. Ismail ◽  
F.V. Fernández
Keyword(s):  
Circuit Design ◽  
Rf Cmos ◽  
Cmos Circuit ◽  
Wireless Transceivers

Compact modelling of noise for RF CMOS circuit design

2004 ◽  
Vol 151 (2) ◽  
pp. 167 ◽  
Author(s):  
A.J. Scholten ◽  
L.F. Tiemeijer ◽  
R. van Langevelde ◽  
R.J. Havens ◽  
A.T.A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Design ◽  
Rf Cmos ◽  
Cmos Circuit

RF CMOS RELIABILITY

2001 ◽  
Vol 11 (04) ◽  
pp. 1249-1295 ◽  
Author(s):  
SASAN NASEH ◽  
M. JAMAL DEEN
Keyword(s):  
Circuit Simulation ◽  
Low Noise ◽  
Rf Cmos ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Rf Cmos Circuits ◽  
Noise Amplifier ◽  
Hot Carrier Effects ◽  
Rf Performance ◽  
Nmos Transistors

In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.

Submicron CMOS Circuit Simulation Model Accurate from Liquid Nitrogen to Room Temperature

ESSDERC ’89 ◽  
1989 ◽  
pp. 407-412
Author(s):  
H. I. Hanafi ◽  
T. J. Bucelot ◽  
D. S. Zicherman ◽  
R. W. Weiss ◽  
P. J. Restle
Keyword(s):  
Simulation Model ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Circuit Simulation ◽  
Cmos Circuit ◽  
Submicron Cmos

Device Modeling for Analog and RF CMOS Circuit Design

2003 ◽  
Author(s):  
Trond Ytterdal ◽  
Yuhua Cheng ◽  
Tor A. Fjeldly
Keyword(s):  
Circuit Design ◽  
Device Modeling ◽  
Rf Cmos ◽  
Cmos Circuit
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