DC/AC Compact Modeling of TFETs for Circuit Simulation of Logic Cells Based on an Analytical Physics-Based Framework

2017 ◽  
Author(s):  
Fabian Horst ◽  
Alexander Kloes ◽  
Atieh Farokhnejad ◽  
Michael Graef ◽  
Fabian Hosenfeld ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Compact Modeling ◽  
Logic Cells

scholarly journals Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

2021 ◽  
Vol 11 (11) ◽  
pp. 4838
Author(s):  
Je-Hyuk Kim ◽  
Youngjin Seo ◽  
Jun Tae Jang ◽  
Shinyoung Park ◽  
Dongyeon Kang ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Circuit Simulation ◽  
Flexible Substrate ◽  
Atomic Layer ◽  
Operating Conditions ◽  
Gate Insulator ◽  
Compact Modeling ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Stress ◽  
Bending Radius

Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.

Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance

2013 ◽  
Vol 740-742 ◽  
pp. 1103-1106 ◽  
Author(s):  
Masataka Miyake ◽  
Fumiya Ueno ◽  
Dondee Navarro ◽  
Mitiko Miura-Mattausch
Keyword(s):  
Energy Loss ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Accurate Prediction ◽  
Compact Model ◽  
Compact Modeling ◽  
Switching Frequency ◽  
Base Region ◽  
Switching Operation ◽  
Improved Performance

We developed a compact model of SiC-IGBT for circuit simulation of power conversion systems under 6.6kV / 100A/cm2 bias operation at a few hundred Hz switching frequency. The model includes punch-through effects occurring at the base/buffer surface of the base region. The model allows accurate prediction of switching waveforms and energy loss improvement caused by the punch-through effect (PT-effect).

Compact modeling of noise for RF CMOS circuit simulation

2003 ◽  
Author(s):  
Andries J. Scholten ◽  
Luuk F. Tiemeijer ◽  
Ronald van Langevelde ◽  
Ramon J. Havens ◽  
Adrie T. A. Zegers-van Duijnhoven ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Compact Modeling ◽  
Rf Cmos ◽  
Cmos Circuit

scholarly journals Second Order Newton Iteration Method and Its Application to MOS Compact Modeling and Circuit Simulation

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 141-145 ◽  
Author(s):  
Zhiping Yu ◽  
Robert W. Dutton
Keyword(s):  
Circuit Simulation ◽  
Iteration Scheme ◽  
Newton Iteration ◽  
Initial Guess ◽  
Second Order ◽  
Compact Modeling ◽  
Algebraic Equations ◽  
Potential Applications ◽  
Pros And Cons ◽  
Newton Iteration Method

A robust second order Newton iteration scheme is proposed for solving the nonlinear algebraic equations. Potential applications include the projection of the initial guess to the solution when the parameters in the equations are changed. The mathematical derivation leading to the scheme is given and pros and cons of the method are discussed. As an example, the method has been applied to the evaluation of charge-sheet model for MOS as used in the circuit simulation.

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