Formation of Silicon on Insulator (Soi) With Separation by Plasma Implantation of Oxygen (Spimox)

1994 ◽  
Vol 354 ◽  
Author(s):  
J.B. Liu ◽  
S.S.K. Iyer ◽  
J. Min ◽  
P. Chu ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon On Insulator ◽  
Low Oxygen ◽  
Double Oxide ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Post Implantation ◽  
Si Wafer

AbstractBuried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PHI). We call this process of making separation by implantation of oxygen (SIMOX) with implantation by PIII as separation by plasma implantation of oxygen (SPIMOX). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a nominal dose of 2 × 1017 cm”2 of oxygen was obtained in less than three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) were used to characterize the wafers. Three distinct modes of microstructure development were observed after post implantation annealing. With a low oxygen dose (< 1 × 1017 cm”2 ), isolated silicon dioxide precipitates did not grow large enough to form a continuous oxide layer. With a high oxygen dose ( > 3 × 1017 cm”2 ), however, a single buried oxide layer was observed. By optimizing the concentration ratio of 0+ and 02+ in the plasma and the implant dose, a double oxide layer (Si/oxide/Si/oxide/Si) structure, was produced in a single implantation step.

Competitive Oxidation During Buried Oxide Formation Using Separation by Plasma Implantation of Oxygen (Spimox)

1995 ◽  
Vol 388 ◽  
Author(s):  
Jingbao Liu ◽  
S. Sundar Kumar Iyer ◽  
Jing Min ◽  
Paul Chu ◽  
Ron Gronsky ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Surface Oxidation ◽  
Silicon On Insulator ◽  
Implantation Technique ◽  
Buried Oxide ◽  
Gaussian Profile ◽  
Different Depths ◽  
Non Gaussian ◽  
Post Implantation ◽  
Si Wafer

AbstractWe have recently demonstrated a new implantation technique called SPIMOX (separation by plasma implantation of oxygen) to synthesize silicon-on-insulator structures using plasma immersion ion implantation (PIII) process. the implantation is performed by applying a large negative bias to a Si wafer immersed in an oxygen plasma created by an ECR source. Since the technique has no mass analysis, coexistence of O+ and O2+ ions in oxygen plasma can cause a non-Gaussian profile of the as-implanted oxygen distribution. We observed that during post-implantation annealing, the ripening process of the oxide precipitates depends on depth and concentration of the oxygen peaks. IN addition, implanted oxygen can migrate towards the Si surface during annealing, preventing a continuous buried oxide layer formation. IN this paper, we report our observation on the effect of the implantation profile on the competitions between internal oxidation at different depths and between internal and surface oxidation processes. With an additional He implantation, we demonstrate that the nucleation of oxide precipitation can be enhanced.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
Erin C. Jones ◽  
Seongil Im ◽  
Nathan W. Cheung
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Amorphous Region ◽  
Electrical Characteristics ◽  
Applied Bias ◽  
Rapid Thermal Anneal ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Si Wafer

ABSTRACTSub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4–6 keV and 2 keV, respectively. The amorphous region formed by SiF4 im-plantion is shown to be effective in slowing B diffusion during a 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrys-tallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

An analysis of high temperature (1150 °C) furnace annealing of buried oxide wafers formed by ion implantation

1989 ◽  
Vol 4 (1) ◽  
pp. 167-176 ◽  
Author(s):  
S. R. Wilson ◽  
M. E. Burnham ◽  
M. Kottke ◽  
R. P. Lorigan ◽  
S. J. Krause ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Structural Changes ◽  
Relative Number ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
Buried Oxide ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Residual Damage

Silicon-on-insulator films were formed by ion implantation of oxygen and were treated with various annealing cycles at peak temperatures of 1150 °C, 1200 °C, and 1250 °C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions, as well as the residual damage and precipitate size and distribution, were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective, “precipitate-free” superficial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this systematic study of annealing conditions was that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150 °C are not equivalent to shorter anneals at 1250 °C even though the diffusion length of oxygen for these treatments is the same.

Si Wafer Bonding: Structural Features of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 85-90 ◽  
Author(s):  
V.I. Vdovin ◽  
N.D. Zakharov ◽  
Eckhard Pippel ◽  
P. Werner ◽  
M.G. Milvidskii ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Wafer Bonding ◽  
Lattice Mismatch ◽  
Twist Angle ◽  
Structural Features ◽  
High Temperature Annealing ◽  
Bonded Interface ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Si Wafer

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

Microstructure and He Bubble Effects on Al-Cu Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
C.S. Camacho ◽  
P.F.P. Fichtner ◽  
F.C. Zawislak ◽  
G. Feldmann
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microelectronic Device ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Grain Structures ◽  
Transmission Electron ◽  
Device Reliability ◽  
Improve Device ◽  
Post Implantation

ABSTRACTThe effects of film morphology (mosaic- or bamboo-like grain structures) and of He bubbles on the redistribution of Cu, as well as on the formation of Al-Cu precipitates in 200 nm thick Al/SiO2 films similar to microelectronic device interconnects, are investigated using Rutherford backscattering spectrometry, elastic recoil detection analysis and transmission electron microscopy. As-deposited and pre-annealed Al films were implanted with Cu and/or He ions forming concentration profiles located 100 nm below the surface and with peak concentrations of about 3 at.%. It is shown that grain boundaries and/or He bubbles can affect the vacancy fluxes inside the grains and reduce or even inhibit the Cu redistribution as well as the nucleation and growth of θ and θ′ Al-Cu precipitates during post-implantation annealings at temperatures from 473 to 553 K. It is also shown that mosaic-like grain structures allow the control of grain size distribution within the 25 to 1500 nm size range, thus providing an additional microstructure engineering tool to improve device reliability against electromigration failures.

The Effects of Annealing Temperature on the Characteristics of Buried Oxide Silicon-On-Insulator

1985 ◽  
Vol 53 ◽  
Author(s):  
B.-Y Mao ◽  
P.-H. Chang ◽  
H.W. Lam ◽  
B.W. Shen ◽  
J.A. Keenan
Keyword(s):  
Annealing Temperature ◽  
Silicon Film ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Thermal Donor ◽  
Buried Oxide ◽  
Lower Oxygen ◽  
Higher Temperature ◽  
Soi Substrates ◽  
Post Implantation

ABSTRACTThe effects of post implantation annealing on the properties of buried oxide silicon-on-insulator (SOI) substrates in the temperature range of 1150°C to 1300°C have been studied. Microstructural analyses showed that the crystallinity of the top silicon layer was improved at higher annealing temperature. Lower thermal donor generation at 450°C was observed in SOI annealed at higher temperature. The improvement in microstructure and lower thermal donor generation were correlated to the lower oxygen concentration in the top silicon film.

Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

2003 ◽  
Vol 83 (15) ◽  
pp. 3162-3164 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Yasuhiro Imai ◽  
Hiroya Ikeda ◽  
Michiharu Tabe
Keyword(s):  
Oxide Layer ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Silicon Islands

Ion-Beam-Induced Silicide Formation in Nickel Thin Films on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
C. Y. Hou
Keyword(s):  
Thin Films ◽  
Driving Force ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Critical Value ◽  
Silicide Formation ◽  
Nickel Thin Films ◽  
Transmission Electron ◽  
Post Implantation

As+-ion-induced silicide formation in nickel thin films on silicon was investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The emphasis was on the study of ion-beam-induced microstructural changes.For 160 keV As+ implantation, amorphization of the interface occurred at a dose of 5 × 1014 cm−2. Ni2Si was found together with an amorphous layer after a 1 × 1015 cm−2 bombardment. For Ni/Si(100) the surface layer became completely amorphous after implantation to 5×1015 cm−2. Silicides were found after a 1×1016 cm−2 irradiation. The amorphous layer was not stable enough to withstand the enormous chemical driving force causing the formation of crystalline silicides as the composition ratio Nsi/NNi reached a critical value. A similar trend for ion-beam-induced reactions was found for 190 keV As+ implantation on Ni/Si(111) as for 160 keV implantation.The results of post-implantation annealing showed major differences from those obtained for directly annealed samples.

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