New advanced two-color (MW/LW) infrared detector and focal plane array design using InGaAs/InAlAs quantum well infrared photodetectors on InP substrates

2001 ◽  
Author(s):  
Stephen W. Kennerly ◽  
John W. Little ◽  
Arnold C. Goldberg ◽  
Richard P. Leavitt
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Infrared Photodetectors ◽  
Array Design ◽  
Quantum Well Infrared Photodetectors ◽  
Inp Substrates

All-GaAs/AlGaAs readout circuit for quantum-well infrared detector focal plane array

1997 ◽  
Vol 44 (11) ◽  
pp. 1807-1812 ◽  
Author(s):  
V. Umansky ◽  
G. Bunin ◽  
K. Gartsman ◽  
C. Sharman ◽  
R. Almuhannad ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Readout Circuit

Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection

1994 ◽  
Vol 299 ◽  
Author(s):  
Sheng S. Li ◽  
Y. H. Wang ◽  
M. Y. Chuang ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Image Sensor ◽  
Infrared Photodetectors ◽  
Large Area ◽  
Dual Mode ◽  
Sensor Applications ◽  
Quantum Well Infrared Photodetectors ◽  
Material Systems ◽  
Ir Detection

AbstractWe present four new types of III-V quantum well infrared photodetectors (QWIPs) operating in photoconductive (PC) and photovoltaic (PV) modes for the wavelength range from 2 to 14 μm. These dual-mode (DM) operation QWIPs were grown by the MBE technique using GaAs/AlGaAs, AlAs/AlGaAs, and InGaAs/InAlAs material systems. Based on the bound-to-miniband (BTM) and the enhanced bound-to-continuum (BTC) intersubband transition schemes, these detectors provide the features of large absorption coefficient, low dark current, and high detectivity in the wavelength of interest, and show promising for use in large area IR focal plane array image sensor applications.

Differentially Strained P-Doped Quantum well Infrared Photodetector

1994 ◽  
Vol 299 ◽  
Author(s):  
R.T. Kuroda ◽  
E. Garmire
Keyword(s):  
Quantum Well ◽  
Dark Current ◽  
High Performance ◽  
Incident Light ◽  
Infrared Detector ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Quantum Well Infrared Photodetectors ◽  
Performance Specifications

AbstractIn this paper, we discuss a differentially strained p-doped quantum well infrared photodetector that achieves high performance specifications. We examine key device specifications for a 9 and 18 μm infrared detector. We calculate that through differential strain, these novel detectors have improved gain and substantially reduced dark current over previous quantum well infrared photodetectors, while being able to detect normal incident light.

Focal Plane Imaging Arrays Based on GaAs/AlGaAs Quantum Well Infrared Photodetectors

1997 ◽  
pp. 311-318 ◽  
Author(s):  
H. C. Liu ◽  
M. Buchanan ◽  
Jianmeng Li ◽  
Z. R. Wasilewski ◽  
P. H. Wilson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Photodetectors ◽  
Imaging Arrays ◽  
Quantum Well Infrared Photodetectors

Corrugated Quantum Well Infrared Photodetectors and Arrays

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors
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