All-GaAs/AlGaAs readout circuit for quantum-well infrared detector focal plane array

1997 ◽  
Vol 44 (11) ◽  
pp. 1807-1812 ◽  
Author(s):  
V. Umansky ◽  
G. Bunin ◽  
K. Gartsman ◽  
C. Sharman ◽  
R. Almuhannad ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Readout Circuit

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

2018 ◽  
Vol 113 (2) ◽  
pp. 021101 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
...  
Keyword(s):  
Focal Plane ◽  
Operating Temperature ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
High Operating Temperature

scholarly journals InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 806 ◽  
Author(s):  
Gamini Ariyawansa ◽  
Joshua Duran ◽  
Charles Reyner ◽  
John Scheihing
Keyword(s):  
High Temperature ◽  
Quantum Efficiency ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Integration Time ◽  
Strained Layer ◽  
Detector Structure ◽  
Strained Layer Superlattice ◽  
High Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10−4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.

Antimonide e-SWIR, MWIR, and LWIR barrier infrared detector and focal plane array development

2018 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sam A. Keo ◽  
Sir B. Rafol ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array

Test and evaluation of reference-based nonuniformity correction methods for microbolometer infrared detectors

2010 ◽  
Vol 18 (1) ◽  
Author(s):  
T. Orżanowski ◽  
H. Madura
Keyword(s):  
Amorphous Silicon ◽  
Focal Plane ◽  
Infrared Detectors ◽  
Focal Plane Array ◽  
Readout Circuit ◽  
Correction Algorithm ◽  
Nonuniformity Correction ◽  
Test And Evaluation

AbstractIn the paper, reference-based nonuniformity correction methods for microbolometer infrared detectors are discussed and tested. In order to evaluate their effectiveness, a complete readout circuit for amorphous silicon microbolometer focal plane array has been designed. The tests were carried out on a developed stand including several extended blackbodies. Some modification of standard two-point correction algorithm incorporating detectors response at external shutter to compensate offset drift is also proposed. The obtained results are presented.

Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array

2007 ◽  
Vol 43 (12) ◽  
pp. 685 ◽  
Author(s):  
A. Bezinger ◽  
H.C. Liu ◽  
B. Aslan ◽  
M. Buchanan ◽  
A.J. Springthorpe ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Focal Plane Array ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector
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