Measuring thicknesses of native oxide, crystalline-silicon, and buried oxide layers and the interface roughnesses of SOI

2000 ◽  
Author(s):  
Iris Bloomer ◽  
George G. Li ◽  
A. Rahim Forouhi ◽  
A. Auberton-Herve ◽  
Andrew Wittkower
Keyword(s):  
Crystalline Silicon ◽  
Native Oxide ◽  
Oxide Layers ◽  
Buried Oxide

Optical Characterization of Silicon-On-Insulator

1996 ◽  
Vol 446 ◽  
Author(s):  
G. G. Li ◽  
A. R. Forouhi ◽  
I. Bloomer ◽  
A. Auberton-Herve ◽  
A. Wittkower
Keyword(s):  
Optical Constants ◽  
Crystalline Silicon ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Buried Oxide ◽  
A New Technique ◽  
Silicon Islands ◽  
Destructive Measurement ◽  
Non Destructive

AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction coefficient (k), and the smoothness of the interfaces is established. The “n&k Method” determines these quantities simultaneously and without multiple solutions for thickness. The non-destructive measurement of interface roughness between the buried oxide under-layer and the silicon substrate is associated with the presence of silicon islands. The native oxide that forms on SOI is also detected and measured. No initial user's input for thickness and optical constants are required in order to obtain these results. The spectra of optical constants are measured accurately and reliably.

ChemInform Abstract: Growth of Buried Oxide Layers of Silicon-on-Insulator (SOI) Structures by Thermal Oxidation of the Top Silicon Layer.

ChemInform ◽  
2010 ◽  
Vol 28 (43) ◽  
pp. no-no
Author(s):  
E. SCHROER ◽  
S. HOPFE ◽  
Q. Y. TONG ◽  
U. GOESELE ◽  
W. SKORUPA
Keyword(s):  
Thermal Oxidation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Oxide Layers ◽  
Buried Oxide

Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs

1981 ◽  
pp. 228-231
Author(s):  
K. V. Anand ◽  
P. Pang ◽  
J. B. Butcher ◽  
K. Das ◽  
E. Franks ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide ◽  
Potential Use

Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers

1998 ◽  
Vol 10 (4) ◽  
pp. 498-500 ◽  
Author(s):  
J. Heerlein ◽  
M. Grabherr ◽  
R. Jager ◽  
P. Unger
Keyword(s):  
Single Mode ◽  
Native Oxide ◽  
Oxide Layers ◽  
Lateral Confinement

More Than a Surface Probe: Investigation of Subsurface Charging in Buried Oxide Layers in Silicon Using Kelvin Probe Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 1090-1091
Author(s):  
Marion A. Stevens-Kalceff
Keyword(s):  
Kelvin Probe ◽  
Oxide Layers ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Buried Oxide ◽  
Surface Probe ◽  
Probe Investigation

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Surface Oxidation of Nano-Silicon as a Method for Cycle Life Enhancement of Li-ion Active Materials

Molecules ◽  
2020 ◽  
Vol 25 (18) ◽  
pp. 4093
Author(s):  
Maciej Ratynski ◽  
Bartosz Hamankiewicz ◽  
Dominika A. Buchberger ◽  
Andrzej Czerwinski
Keyword(s):  
Oxide Layer ◽  
Silicon Nanoparticles ◽  
Specific Capacity ◽  
Single Step ◽  
Native Oxide ◽  
Electrochemical Characteristics ◽  
Active Materials ◽  
Silicon Oxide Layer ◽  
Oxide Layers ◽  
Li Ion

Among the many studied Li-ion active materials, silicon presents the highest specific capacity, however it suffers from a great volume change during lithiation. In this work, we present two methods for the chemical modification of silicon nanoparticles. Both methods change the materials’ electrochemical characteristics. The combined XPS and SEM results show that the properties of the generated silicon oxide layer depend on the modification procedure employed. Electrochemical characterization reveals that the formed oxide layers show different susceptibility to electro-reduction during the first lithiation. The single step oxidation procedure resulted in a thin and very stable oxide that acts as an artificial SEI layer during electrode operation. The removal of the native oxide prior to further reactions resulted in a very thick oxide layer formation. The created oxide layers (both thin and thick) greatly suppress the effect of silicon volume changes, which significantly reduces electrode degradation during cycling. Both modification techniques are relatively straightforward and scalable to an industrial level. The proposed modified materials reveal great applicability prospects in next generation Li-ion batteries due to their high specific capacity and remarkable cycling stability.

Sign in / Sign up

Export Citation Format

Share Document